Numonyx™ StrataFlash® Cellular Memory (M18)
7.4
Program and Erase Characteristics
The M18 device includes specifications for different lithographies, densities, and
frequencies. For additional information on combinations, see Table 4, “M18 Product
Litho/Density/Frequency Combinations” on page 10 in the Section 2.0, “Functional
Description.
Table 24: Program-Erase Characteristics
V
PPL/VPPH
Nbr.
Symbol
Parameter
Unit Notes
Density
(Mbit)
Litho (nm)
Min
Typ
Max
Conventional Word Programming
Single word (first
—
—
—
—
—
—
115
50
230
230
word)
Program
Time
W200
tPROG/W
µs
1,2
Single word
(subsequent word)
Buffered Programming
W200
tPROG/W
Single word
—
—
—
—
250
500
4.3
µs
256, 512
Program
Time
90
2.15
1
One Buffer (512
words)
W250
tPROG/PB
ms
128, 256, 512,
1024
65
1.02
2.05
Buffered Enhanced Factory Programming
90
256, 512
4.2
W451
W452
tBEFP/W
Single word
—
5
—
—
1,3,4
1
Program
Time
65
—
128, 256, 512
—
2.0
—
µs
tBEFP/
Setup
Buffered EFP Setup
Erasing and Suspending
Erase
Time
128-Kword Main
Array Block
W501
tERS/MAB
—
—
—
0.9
4
s
1
W600
W601
tSUSP/P
tSUSP/E
Suspen
d
Latency
Program suspend
Erase suspend
—
—
—
—
—
—
20
20
30
30
1
1
µs
Blank Check
Blank
Check
W702
tBC/MB
Main array block
—
—
—
3.2
—
ms
1
Notes:
1.
Typical values measured at TC = +25 °C and nominal voltages. Performance numbers are valid for all speed versions.
Sampled, but not 100% tested.
2.
3.
4.
First and subsequent words refer to first word and subsequent words in Control Mode programming region.
Averaged over entire device.
BEFP not validated at VPPL
.
Datasheet
68
April 2008
309823-10
NUMONYX [ NUMONYX B.V ]
