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JS28F320C3BD90 参数 Datasheet PDF下载

JS28F320C3BD90图片预览
型号: JS28F320C3BD90
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 2MX16, 90ns, PDSO48, 12 X 20 MM, LEAD FREE, TSOP-48]
分类和应用: 光电二极管内存集成电路闪存
文件页数/大小: 70 页 / 638 K
品牌: NUMONYX [ NUMONYX B.V ]
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C3 Discrete  
2.0  
Functional Overview  
This section provides an overview of the Numonyx™ Advanced+ Boot Block Flash  
Memory (C3) device features and architecture.  
2.1  
Product Overview  
The C3 flash memory device provides high-performance asynchronous reads in  
package-compatible densities with a 16 bit data bus. Individually-erasable memory  
blocks are optimally sized for code and data storage. Eight 4 Kword parameter blocks  
are located in the boot block at either the top or bottom of the device’s memory map.  
The rest of the memory array is grouped into 32 Kword main blocks.  
The device supports read-array mode operations at various I/O voltages (1.8 V and 3  
V) and erase and program operations at 3 V or 12 V VPP. With the 3 V I/O option, VCC  
and VPP can be tied together for a simple, ultra-low-power design. In addition to I/O  
voltage flexibility, the dedicated VPP input provides complete data protection when VPP  
VPPLK  
.
The C3 Discrete device features a 128-bit protection register enabling security  
techniques and data protection schemes through a combination of factory-programmed  
and user-programmable OTP data registers. Zero-latency locking/unlocking on any  
memory block provides instant and complete protection for critical system code and  
data. Additional block lock-down capability provides hardware protection where  
software commands alone cannot change the block’s protection status.  
A command User Interface (CUI) serves as the interface between the system processor  
and internal operation of the device. A valid command sequence issued to the CUI  
initiates device automation. An internal Write State Machine (WSM) automatically  
executes the algorithms and timings necessary for block erase, program, and lock-bit  
configuration operations.  
The device offers three low-power saving features: Automatic Power Savings (APS),  
standby mode, and deep power-down mode. The device automatically enters APS  
mode following read cycle completion. Standby mode begins when the system  
deselects the flash memory by deasserting Chip Enable, CE#. The deep power-down  
mode begins when Reset Deep Power-Down, RP# is asserted, which deselects the  
memory and places the outputs in a high-impedance state, producing ultra-low power  
savings. Combined, these three power-savings features significantly enhanced power  
consumption flexibility.  
March 2008  
290645-24  
Datasheet  
9