Numonyx
TM
StrataFlash
®
Embedded Memory
(P30-65nm)
256-Mbit, 512-Mbit (256M/256M)
Datasheet
Product Features
High performance
— 100 ns initial access for Easy BGA
— 110 ns initial access for TSOP
— 25 ns 16-word asynchronous-page read mode
— 52 MHz with zero WAIT states, 17ns clock-to-
data output synchronous-burst read mode
— 4-, 8-, 16-, and continuous-word options for
burst mode
— Buffered Enhanced Factory Programming
(BEFP) at 2.0 MByte/s (Typ) using 512-word
buffer
— 1.8 V buffered programming at 1.5MByte/s
(Typ) using 512-word buffer
Security
— One-Time Programmable Register:
• 64 unique factory device identifier bits
• 2112 user-programmable OTP bits
— Absolute write protection: V
PP
= V
SS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
— Password Access feature
Software
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
— Numonyx™ Flash Data Integrator optimized
— Basic Command Set and Extended Function
Interface (EFI) Command Set compatible
— Common Flash Interface capable
Architecture
— Multi-Level Cell Technology: Highest Density
at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or
bottom configuration
— 128-KByte main blocks
— Blank Check to verify an erased block
Density and Packaging
— 56-Lead TSOP package (256-Mbit only)
— 64-Ball Easy BGA package (256, 512-Mbit)
— Numonyx™ QUAD+ SCSP (256, 512-Mbit)
— 16-bit wide data bus
Voltage and Power
— V
CC
(core) voltage: 1.7 V – 2.0 V
— V
CCQ
(I/O) voltage: 1.7 V – 3.6 V
— Standby current: 65 µA (Typ) for 256-Mbit;
— 52 MHz continuos synchronous read current:
21mA (Typ)/24mA(Max)
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX™ X process technology
Datasheet
1
Apr 2009
Order Number: 320002-08
NUMONYX [ NUMONYX B.V ]
