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JS28F640J3D75E 参数 Datasheet PDF下载

JS28F640J3D75E图片预览
型号: JS28F640J3D75E
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 4MX16, 75ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56]
分类和应用: 光电二极管内存集成电路闪存
文件页数/大小: 66 页 / 769 K
品牌: NUMONYX [ NUMONYX B.V ]
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)  
13.5  
System Interface Information  
The following device information can optimize system interface software.  
Table 38: System Interface Information  
Hex  
Code  
Offset  
Length  
Description  
Add.  
Value  
VCC logic supply minimum program/erase voltage  
bits 0–3 BCD 100 mV  
1Bh  
1
1B:  
--27  
--36  
--00  
--00  
2.7 V  
bits 4–7 BCD volts  
V
V
V
CC logic supply maximum program/erase voltage  
bits 0–3 BCD 100 mV  
bits 4–7 BCD volts  
1Ch  
1Dh  
1Eh  
1
1
1
1C:  
1D:  
1E:  
3.6 V  
0.0 V  
0.0 V  
PP [programming] supply minimum program/erase voltage  
bits 0–3 BCD 100 mV  
bits 4–7 HEX volts  
PP [programming] supply maximum program/erase voltage  
bits 0–3 BCD 100 mV  
bits 4–7 HEX volts  
1Fh  
20h  
21h  
22h  
23h  
24h  
25h  
26h  
1
1
1
1
1
1
1
1
“n” such that typical single word program time-out = 2n µs  
“n” such that typical max. buffer write time-out = 2n µs  
“n” such that typical block erase time-out = 2n ms  
1F:  
20:  
21:  
22:  
23:  
24:  
25:  
26:  
--06  
--07  
--0A  
--00  
--02  
--03  
--02  
--00  
64 µs  
128 µs  
1 s  
“n” such that typical full chip erase time-out = 2n ms  
NA  
“n” such that maximum word program time-out = 2n times typical  
“n” such that maximum buffer write time-out = 2n times typical  
“n” such that maximum block erase time-out = 2n times typical  
“n” such that maximum chip erase time-out = 2n times typical  
256 µs  
1024 µs  
4 s  
NA  
13.6  
Device Geometry Definition  
This field provides critical details of the flash device geometry.  
Table 39: Device Geometry Definition  
Offset  
Length  
Description  
Code See Table Below  
27h  
1
“n” such that device size = 2n in number of bytes  
27:  
x8/  
x16  
28h  
2
Flash device interface: x8 async x16 async x8/x16 async  
28:  
--02  
28:00,29:00 28:01,29:00 28:02,29:00  
29:  
2A:  
2B:  
--00  
--05  
--00  
2Ah  
2
“n” such that maximum number of bytes in write buffer = 2n  
32  
Number of erase block regions within device:  
1. x = 0 means no erase blocking; the device erases in “bulk”  
2. x specifies the number of device or partition regions with one or more  
contiguous same-size erase blocks  
3. Symmetrically blocked partitions have one blocking region  
4. Partition size = (total blocks) x (individual block size)  
2Ch  
2Dh  
1
4
2C:  
--01  
1
Erase Block Region 1 Information  
2D:  
2E:  
2F:  
30:  
bits 0–15 = y, y+1 = number of identical-size erase blocks  
bits 16–31 = z, region erase block(s) size are z x 256 bytes  
December 2007  
316577-06  
Datasheet  
61