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JS28F640J3D75E 参数 Datasheet PDF下载

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型号: JS28F640J3D75E
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 4MX16, 75ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56]
分类和应用: 光电二极管内存集成电路闪存
文件页数/大小: 66 页 / 769 K
品牌: NUMONYX [ NUMONYX B.V ]
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Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)  
Table 30: Byte-Wide Protection Register Addressing  
Byte  
Use  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
LOCK  
Both  
Both  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
LOCK  
0
Factory  
Factory  
Factory  
Factory  
Factory  
Factory  
Factory  
Factory  
User  
1
2
3
4
5
6
7
8
9
User  
A
User  
B
User  
C
User  
D
E
User  
User  
F
User  
Note: All address lines not specified in the above table must be 0 when accessing the Protection Register, i.e., A[MAX:9] = 0.  
9.7.7  
VPP/ VPEN Protection  
When it’s necessary to protect the entire array, global protection can be achieved using  
a hardware mechanism using VPP or VPEN. Whenever a valid voltage is present on VPP  
or VPEN, blocks within the main flash array can be erased or programmed. By  
grounding VPP or VPEN, blocks within the main array cannot be altered – attempts to  
program or erase blocks will fail resulting in the setting of the appropriate error bit in  
the Status Register. By holding VPP or VPEN low, absolute write protection of all blocks  
in the array can be achieved.  
Datasheet  
46  
December 2007  
316577-06