1.8 Volt Intel
®
Wireless Flash Memory
(W18)
28F320W18, 28F640W18, 28F128W18
Preliminary Datasheet
Product Features
High Performance
— 70 ns Initial Access Speed
— 14 ns Clock to Data Output Zero Wait-State
Synchronous Burst Mode
— 20 ns Page Mode Read Speed
— 4-, 8-, and Continuous Word Burst Modes
— Burst and Page Modes in Both Parameter and
Main Partitions
— Programmable WAIT Configuration
— Enhanced Factory Programming Mode:
3.50 µs/Word (Typ)
— Glueless 12 V interface for Fast Factory
Programming @ 8 µs/Word (Typ)
— 1.8 V Low-Power Programming @ 12 µs/Word
(Typ)
— Program or Erase during Reads
s
Architecture
— Multiple 4-Mbit Partitions
— Dual-Operation: RWW or RWE (Read-While -
Write or Read-While-Erase)
— Eight, 4-Kword Parameter Code/Data Blocks
— 32-Kword Main Code/Data Blocks
— Top and Bottom Parameter Configurations
s
Power Operation
— 1.65 V to 1.95 V Read and Write Operations
— 1.7 V to 2.24 V V
CCQ
for I/O Isolation
— Standby Current: 5 µA (Typ)
— 40/52/66 MHz 4-word Sync Read
Current: 7 mA (Typ)
s
Software
— 5 µs (Typ) Program Suspend
— 5 µs (Typ) Erase Suspend
— Intel
®
Flash Data Integrator (IFDI) Software
Optimized
— Intel Basic Command Set Compatible
— Common Flash Interface (CFI)
s
Quality and Reliability
— Extended Temperature –40 °C to +85 °C
— Minimum 100K Block Erase Cycles
— ETOX™ VII Flash Technology (0.18 µm)
s
Security
— Two 64-bit Protection Registers: 64 Unique
Device Identifier Bits; 64 User-Programmable
OTP Bits
— Absolute Write Protection
⇒V
PP
= GND
— Erase/Program Lockout during Power
Transitions
— Individual Dynamic Zero-Latency Block
Locking
s
Density and Packaging
— 32-Mbit in a VF BGA Package
— 64-Mbit and 128-Mbit in
µBGA*Package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
µBGA*
and VF BGA Packages
— 16-Bit Wide Data Bus
s
The 1.8 Volt Intel
®
Wireless Flash memory with flexible multi-partition dual-operation provides high-
performance asynchronous and synchronous burst reads. It is an ideal memory for low-voltage burst CPUs.
Combining high read performance with flash memory’s intrinsic non-volatility, 1.8 Volt Intel
®
Wireless Flash
memory eliminates the traditional system-performance paradigm of shadowing redundant code memory from
slow nonvolatile storage to faster execution memory. It reduces the total memory requirement that increases
reliability and reduces overall system power consumption and cost.
The 1.8 Volt Intel
®
Wireless Flash memory’s flexible multi-partition architecture allows programming or erasing
to occur in one partition while reading from another partition. This allows for higher data write throughput
compared to single partition architectures. The dual-operation architecture also allows two processors to
interleave code operations while program and erase operations take place in the background. The designer can
also choose the size of the code and data partitions via the flexible multi-partition architecture.
The 1.8 Volt Intel
®
Wireless Flash memory is manufactured on Intel
®
0.18 µm ETOX™ VII process technology.
It is available in µBGA and VF BGA packages, which are ideal for board-constrained applications.
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
Order Number:
290701-002
January 2001
NUMONYX [ NUMONYX B.V ]
