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GE28F640B3BC80 参数 Datasheet PDF下载

GE28F640B3BC80图片预览
型号: GE28F640B3BC80
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 4MX16, 80ns, PBGA48, VFBGA-48]
分类和应用:
文件页数/大小: 71 页 / 1152 K
品牌: NUMONYX [ NUMONYX B.V ]
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28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3  
10.1  
Bus Operations  
The B3 flash memory device performs read, program, and erase in-system operations through the  
local CPU or microcontroller. All bus cycles to or from the flash memory conform to standard  
microcontroller bus cycles. Four control pins dictate the data flow in and out of the flash memory  
device:  
CE#  
OE#  
WE#  
RP#  
Table 27 summarizes these bus operations.  
Table 27.  
Bus Operations(1)  
Mode  
Note  
RP#  
CE#  
OE#  
WE#  
DQ0–7  
DQ8–15  
Read (Array, Status, or Identifier)  
2–4  
2
VIH  
VIH  
VIH  
VIL  
VIH  
VIL  
VIL  
VIH  
X
VIL  
VIH  
X
VIH  
VIH  
X
DOUT  
High Z  
High Z  
High Z  
DIN  
DOUT  
High Z  
High Z  
High Z  
DIN  
Output Disable  
Standby  
Reset  
2
2, 7  
2, 5–7  
X
X
Write  
VIL  
VIH  
VIL  
Notes:  
1.  
8-bit devices use only DQ[0:7].  
16-bit devices use DQ[0:15].  
2.  
3.  
4.  
5.  
6.  
7.  
X must be VIL, VIH for control pins and addresses.  
See DC Characteristics for VPPLK, VPP1, VPP2, VPP3, VPP4 voltages.  
Manufacturer and device codes can also be accessed in read identifier mode (A1–A21 = 0). See Table 29.  
Refer to Table 30 for valid DIN during a Write operation.  
To program or erase the lockable blocks, hold WP# at VIH  
.
RP# must be at GND 0.2 V to meet the maximum deep power-down current specified.  
10.1.1  
Read  
The B3 flash memory device provides four read modes:  
read array  
read identifier  
read status  
read query  
These modes are accessible independently of the V voltage. Issue the appropriate Read Mode  
PP  
command to the CUI to enter the corresponding mode. Upon initial device power-up or after exit  
from reset, the flash memory device automatically defaults to read-array mode.  
CE# and OE# must be driven active to obtain data at the outputs.  
CE# is the device selection control. When active, CE# enables the flash memory device.  
OE# is the data output control, and drives the selected memory data onto the I/O bus.  
For all read modes, WE# and RP# must be at V . Figure 10 on page 40 illustrates a read cycle.  
IH  
Datasheet  
Intel® Advanced Boot Block Flash Memory (B3)  
Order Number: 290580, Revision: 020  
18 Aug 2005  
51