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GE28F640B3BC80 参数 Datasheet PDF下载

GE28F640B3BC80图片预览
型号: GE28F640B3BC80
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 4MX16, 80ns, PBGA48, VFBGA-48]
分类和应用:
文件页数/大小: 71 页 / 1152 K
品牌: NUMONYX [ NUMONYX B.V ]
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28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3  
6.2  
Operating Conditions  
Do not operate the flash memory device beyond the Operating Conditions in Table 12. Extended  
exposure beyond the Operating Conditions can affect device reliability.  
Table 12.  
Temperature and Voltage Operating Conditions  
Symbol  
Parameter  
Min  
Max  
Units  
Notes  
TA  
Operating Temperature  
VCC Supply Voltage  
–40  
2.7  
+85  
3.6  
3.6  
3.6  
2.5  
2.5  
3.6  
12.6  
°C  
VCC1  
Volts  
1, 2  
1, 2  
1
VCC2  
3.0  
VCCQ1  
VCCQ2  
VCCQ3  
VPP1  
2.7  
I/O Supply Voltage  
Supply Voltage  
1.65  
1.8  
Volts  
1.65  
11.4  
100,000  
Volts  
Volts  
1
1, 3  
3
VPP2  
Cycling  
Block Erase Cycling  
Cycles  
Notes:  
1.  
2.  
3.  
VCC and VCCQ must share the same supply when they are in the VCC1 range.  
VCCMax = 3.3 V for 0.25µm 32-Mbit devices.  
VPP = 11.4 V–12.6 V can be applied during a program/erase only for a maximum of  
1000 cycles on the main blocks and 2500 cycles on the parameter blocks. VPP can be  
connected to 12 V for a total of 80 hours maximum.  
Datasheet  
Intel® Advanced Boot Block Flash Memory (B3)  
Order Number: 290580, Revision: 020  
18 Aug 2005  
33