欢迎访问ic37.com |
会员登录 免费注册
发布采购

GE28F160C3BD70 参数 Datasheet PDF下载

GE28F160C3BD70图片预览
型号: GE28F160C3BD70
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 1MX16, 70ns, PBGA48, LEAD FREE, VFBGA-48]
分类和应用: 内存集成电路闪存
文件页数/大小: 70 页 / 638 K
品牌: NUMONYX [ NUMONYX B.V ]
 浏览型号GE28F160C3BD70的Datasheet PDF文件第6页浏览型号GE28F160C3BD70的Datasheet PDF文件第7页浏览型号GE28F160C3BD70的Datasheet PDF文件第8页浏览型号GE28F160C3BD70的Datasheet PDF文件第9页浏览型号GE28F160C3BD70的Datasheet PDF文件第11页浏览型号GE28F160C3BD70的Datasheet PDF文件第12页浏览型号GE28F160C3BD70的Datasheet PDF文件第13页浏览型号GE28F160C3BD70的Datasheet PDF文件第14页  
C3 Discrete  
2.2  
Block Diagram  
Figure 1: C3 Flash Memory Device Block Diagram  
DQ 0-DQ15  
V
CCQ  
Output Buffer  
Input Buffer  
Identifier  
Register  
Status  
Register  
I/O Logic  
CE#  
WE#  
OE#  
Command  
User  
Interface  
Power  
Reduction  
Control  
Data  
Comparator  
RP#  
WP#  
Y-Decoder  
X-Decoder  
Y-Gating/Sensing  
Write State  
Machine  
Program/Erase  
Voltage Switch  
A[MAX:MIN]  
Input Buffer  
V
PP  
Address  
Latch  
V
CC  
GND  
Address  
Counter  
2.3  
Memory Map  
The C3 Discrete device is asymmetrically blocked, which enables system code and data  
integration within a single flash device. The bulk of the array is divided into 32 Kword  
main blocks that can store code or data, and 4 Kword boot blocks to facilitate storage  
of boot code or for frequently changing small parameters. See Table 1, “Top Boot  
Memory Map” on page 11 and Table 2, “Bottom Boot Memory Map” on page 12 for  
details.  
Datasheet  
10  
March 2008  
290645-24