Intel® Wireless Flash Memory (W18)
1.0 Introduction
1.0
Introduction
This datasheet contains information about the Intel® Wireless Flash Memory (W18) device family.
This section describes nomenclature used in the datasheet. Section 2.0 provides an overview of the
W18 flash memory device. Section 6.0, Section 7.0, and Section 8.0 describe the electrical
specifications for extended temperature product offerings. Ordering information can be found in
Appendix C.
1.1
Nomenclature
Acronyms that describe product features or usage are defined here:
APS
BBA
CFI
Automatic Power Savings
Block Base Address
Common Flash Interface
Command User Interface
Don’t Use
CUI
DU
EFP
FDI
Enhanced Factory Programming
Flash Data Integrator
No Connect
NC
OTP
PBA
RCR
RWE
RWW
SCSP
SRD
VF BGA
WSM
One-Time Programmable
Partition Base Address
Read Configuration Register
Read-While-Erase
Read-While-Write
Stacked Chip Scale Package
Status Register Data
Very-thi, Fine-pitch, Ball Grid Array
Write State Machine
1.2
Conventions
The following list describes abbreviated terms and phrases used throughout this document:
Refers to the full V voltage range of 1.7 V – 1.95 V (except where noted) and “V = 12 V” refers to 12
CC
PP
“1.8 V”
V
5%.
Set
Refers to registers means the bit is a logical 1 and cleared means the bit is a logical 0.
Often used interchangeably to refer to the external signal connections on the package (ball is the term
used for VF BGA).
Pin and signal
Preliminary Datasheet
9
NUMONYX [ NUMONYX B.V ]
