Numonyx™ Wireless Flash Memory (W18)
with AD Multiplexed IO
Datasheet
Product Features
High Performance Read-While-Write/Erase
— Burst frequency at 66 MHz
— 60 ns Initial Access Read Speed
— 11 ns Burst-Mode Read Speed
— 20 ns Page-Mode Read Speed
— 4-, 8-, 16-, and Continuous-Word Burst
Mode Reads
— Burst and Page Mode Reads in all Blocks,
across all partition boundaries
— Burst Suspend Feature
— Enhanced Factory Programming at
3.1 µs/word (typ. for 0.13 µm)
Architecture
— Multiple 4 Mbit Partitions
— Dual Operation: Read-while-Write and
Read-while-Erase
— 8 KB parameter blocks
— 64 KB main blocks
— Top or Bottom Parameter Configurations
— 16 bit wide data bus
— Multiplexed Address data bus
Power
— V
CC
= 1.70 V to 1.95 V
— V
CCQ
= 1.70 V to 2.24 V or 1.35 V to 1.80 V
— Standby current (0.13 µm): 8 µA (typ.)
— Read current: 7 mA (typ.)
Security
— 128 bit Protection Register
— 64 Unique Bits Programmed by Numonyx
— 64 User-Programmable Bits
— Absolute Write Protection with V
PP
at
Ground
— Individual and Instantaneous Block
Locking/Unlocking with Lock-Down
Capability
Software
— 5 µs (typ.) Program and Erase Suspend
Latency Time
— Numonyx™ Flash Data Integrator
(Numonyx™ FDI) and Common Flash
Interface Compatible
— Programmable WAIT Signal Polarity
Quality and Reliability
— Temperature Range: –40 °C to +85 °C
— 100k Erase Cycles per Block
— 130 nm ETOX™ VIII Process
— 90 nm ETOX™ IX Process
—
Density and Package Ballout
— 130 nm: 32-, 64-, and 128-Mbit
— 90 nm: 32-, 64-Mbit
— 44-ball VF BGA
— 88-ball QUAD+
Order Number: 313272-06
November 2007
NUMONYX [ NUMONYX B.V ]
