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308551-05 参数 Datasheet PDF下载

308551-05图片预览
型号: 308551-05
PDF下载: 下载PDF文件 查看货源
内容描述: 恒忆嵌入式闪存 [Numonyx Embedded Flash Memory]
分类和应用: 闪存
文件页数/大小: 68 页 / 913 K
品牌: NUMONYX [ NUMONYX B.V ]
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Numonyx™ Embedded Flash Memory (J3 v. D)  
To change the device to Read Array mode while it is programming or erasing, first issue  
the Suspend command. After the operation has been suspended, issue the Read Array  
command. When the program or erase operation is subsequently resumed, the device  
will automatically revert back to Read Status mode.  
Note:  
Issuing the Read Array command to the device while it is actively programming or  
erasing causes subsequent reads from the device to output invalid data. Valid array  
data is output only after the program or erase operation has finished.  
The Read Array command functions independent of the voltage level on VPEN.  
9.2.2  
Read Status Register  
Issuing the Read Status Register command places the device in Read Status Register  
mode. Subsequent reads output Status Register information on DQ[7:0], and 00h on  
DQ[15:8]. The device remains in Read Status Register mode until a different read-  
mode command is issued. Performing a program, erase, or block-lock operation also  
changes the device’s read mode to Read Status Register mode.  
The Status Register is updated on the falling edge of CE#, or OE# when CE# is low.  
Status Register contents are valid only when SR7 = 1. When WSM is active, SR7  
indicates the WSM’s state and SR[6:0] are in high-Z state.  
The Read Status Register command functions independent of the voltage level on  
VPEN.  
9.2.3  
Read Device Information  
Issuing the Read Device Information command places the device in Read Device  
Information mode. Subsequent reads output device information on DQ[15:0]. In the  
case of the 256 Mbit device (2 x 128), the command should be issued to the base  
address of the die.  
The device remains in Read Device Information mode until a different read command is  
issued. Also, performing a program, erase, or block-lock operation changes the device  
to Read Status Register mode.  
The Read Device Information command functions independent of the voltage level on  
VPEN.  
9.2.4  
CFI Query  
The query table contains an assortment of flash product information such as block size,  
density, allowable command sets, electrical specifications, and other product  
information. The data contained in this table conforms to the Common Flash Interface  
(CFI) protocol.  
Issuing the CFI Query command places the device in CFI Query mode. Subsequent  
reads output CFI information on DQ[15:0] .The device remains in CFI Query mode until  
a different read command is issued, or a program or erase operation is performed,  
which changes the read mode to Read Status Register mode.  
The CFI Query command functions independent of the voltage level on VPEN.  
9.3  
Programming Operations  
Note:  
All programming operations require the addressed block to be unlocked, and a valid  
VPEN voltage applied throughout the programming operation. Otherwise, the  
programming operation will abort, setting the appropriate Status Register error bit(s).  
Datasheet  
38  
November 2007  
308551-05