Numonyx™ Embedded Flash Memory (J3 v. D)
6.2
DC Voltage specifications
Table 8:
DC Voltage Characteristics
VCCQ
VCC
Parameter
Input Low Voltage
2.7 - 3.6 V
2.7 - 3.6 V
Test Conditions
Notes
Symbol
Min
Max
Unit
VIL
–0.5
2.0
0.8
V
V
2, 5, 6
2, 5, 6
VIH
Input High Voltage
VCCQ + 0.5V
VCC = VCCMin
0.4
0.2
V
V
V
VCCQ = VCCQ Min
IOL = 2 mA
VOL
Output Low Voltage
1, 2
VCC = VCCMin
VCCQ = VCCQ Min
IOL = 100 µA
VCC = VCCMIN
VCCQ = VCCQ Min
IOH = –2.5 mA
0.85 × VCCQ
VOH
Output High Voltage
1, 2
2, 3
VCC = VCCMIN
VCCQ = VCCQ Min
IOH = –100 µA
VCCQ – 0.2
V
V
VPEN Lockout during Program,
Erase and Lock-Bit Operations
VPENLK
VPENH
2.2
3.6
VPEN during Block Erase, Program,
or Lock-Bit Operations
2.7
2.0
V
V
3
4
VLKO
VCC Lockout Voltage
Notes:
1.
2.
3.
Includes STS.
Sampled, not 100% tested.
Block erases, programming, and lock-bit configurations are inhibited when VPEN ≤ VPENLK, and not guaranteed
in the range between VPENLK (max) and VPENH (min), and above VPENH (max).
Block erases, programming, and lock-bit configurations are inhibited when VCC < VLKO, and not guaranteed in
the range between VLKO (min) and VCC (min), and above VCC (max).
4.
5.
6.
Includes all operational modes of the device including standby and power-up sequences
Input/Output signals can undershoot to -1.0v referenced to VSS and can overshoot to VCCQ = 1.0v for
duration of 2ns or less, the VCCQ valid range is referenced to VSS
.
6.3
Capacitance
Table 9:
Numonyx™ Embedded Flash Memory (J3 v. D) Capacitance
Symbol
Parameter1
Type
Max
Unit
Condition2
32, 64, 128 Mb
256 Mb
6
12
8
8
pF
CIN
Input Capacitance
VIN = 0.0 V
16
12
24
32, 64, 128 Mb
256 Mb
pF
COUT
Output Capacitance
VOUT = 0.0 V
16
Notes:
1.
2.
sampled. not 100% tested.
TA = +25 °C, f = 1 MHZ
Datasheet
22
November 2007
308551-05
NUMONYX [ NUMONYX B.V ]
