Numonyx™ Wireless Flash Memory (W18)
Figure 26: Word Program Flowchart
WORD PROGRAM PROCEDURE
Start
Bus
Command
Operation
Write
Program
Setup
Data
Comments
Data = 40h
Addr = Location to program (WA)
Data = Data to program (WD)
Addr = Location to program (WA)
Read SRD
Toggle CE# or OE# to update SRD
Check SR[7]
1 = WSM ready
0 = WSM busy
Write 40h,
Word Address
Write Data
Word Address
Write
Read
Read Status
Register
No
Suspend
Program
Loop
0
Standby
SR[7] =
1
Suspend
Program
Yes
Repeat for subsequent programming operations.
Full status register check can be done after each program or
after a sequence of program operations.
Full Program
Status Check
(if desired)
Program
Complete
FULL PROGRAM STATUS CHECK PROCEDURE
Read Status
Register
Bus
Command
Operation
Standby
SR[3] =
0
1
1
Comments
Check SR[3]
1 = V
PP
error
Check SR[4]
1 = Data program error
Check SR[1]
1 = Attempted program to locked block
Program aborted
V
PP
Range
Error
Standby
Program
Error
SR[4] =
0
Standby
SR[1] =
0
1
Device
Protect Error
SR[3] MUST be cleared before the WSM will allow further
program attempts
Only the Clear Staus Register command clears SR[4:3,1].
If an error is detected, clear the status register before
attempting a program retry or other error recovery.
Program
Successful
11.2
Factory Programming
The standard factory programming mode uses the same commands and algorithm as
the Word Program mode (40h/10h). When V
PP
is at V
PP1
, program and erase currents
are drawn through VCC. If VPP is driven by a logic signal, V
PP1
must remain above the
V
PP1
Min value to perform in-system flash modifications. When VPP is connected to a
12 V power supply, the device draws program and erase current directly from VPP. This
eliminates the need for an external switching transistor to control the V
PP
voltage.
shows examples
of flash power supply usage in various configurations.
Datasheet
60
November 2007
Order Number: 290701-18
NUMONYX [ NUMONYX B.V ]
