Numonyx™ Wireless Flash Memory (W18)
Table 15: AC Write Characteristics — 90 nm (Sheet 2 of 2)
VCCQ
=
1.7 V – 1.95 V
#
Sym
Parameter (1,2)
Unit
Notes
Min
Max
W13
W14
W16
W18
W19
W20
W21
W22
W27
W28
tBHWH (tBHEH
)
WP# Setup to WE# (CE#) High
Write Recovery before Read
WE# High to Valid Data
WE# High to Address Valid
WE# High to CLK Valid
WE# High to ADV# High
ADV# High to WE# Low
CLK to WE# Low
200
-
ns
ns
ns
ns
ns
ns
ns
ns
3
tWHGL (tEHGL
tWHQV
tWHAV
)
0
-
tAVQV +20
-
-
3,6,10
3,9,10
3,10
3,10
11
0
tWHCV
12
12
-
tWHVH
tVHWL
-
<21
<21
tCHWL
11
tWHEL
WE# High to CE# Low
WE# High to ADV# Low
0
0
tWHVL
Notes:
1.
2.
3.
4.
Write timing characteristics during erase suspend are the same as during write-only operations.
A write operation can be terminated with either CE# or WE#.
Sampled, not 100% tested.
Write pulse width low (tWLWH or tELEH) is defined from CE# or WE# low (whichever occurs last) to CE# or WE# high
(whichever occurs first). Hence, tWLWH = tELEH = tWLEH = tELWH
Write pulse width high (tWHWL or tEHEL) is defined from CE# or WE# high (whichever is first) to CE# or WE# low
(whichever is last). Hence, tWLWH = tEHEL = tWHEL = tEHWL
.
5.
6.
.
System designers should take this into account and may insert a software No-Op instruction to delay the first read after
issuing a command.
7.
For commands other than resume commands.
VPP should be held at VPP1 or VPP2 until block erase or program success is determined.
Applicable during asynchronous reads following a write.
tWHCH/L OR tWHVH must be met when transitioning from a write cycle to a synchronous burst read. tWHCH/L and tWHVH both
refer to the address latching event (either the rising/falling clock edge or the rising ADV# edge, whichever occurs first).
The specifications tVHWL and tCHWL can be ignored if there is no clock toggling during the write bus cycle.
8.
9.
10.
11.
Table 16: AC Write Characteristics — 130 nm (Sheet 1 of 2)
VCCQ
=
1.7 V – 2.24 V
#
Sym
Parameter (1,2)
Unit
Notes
-60
Min
Max
W1
W2
t
PHWL (tPHEL
)
)
RST# High Recovery to WE# (CE#) Low
CE# (WE#) Setup to WE# (CE#) Low
WE# (CE#) Write Pulse Width Low
Data Setup to WE# (CE#) High
Address Setup to WE# (CE#) High
CE# (WE#) Hold from WE# (CE#) High
Data Hold from WE# (CE#) High
Address Hold from WE# (CE#) High
WE# (CE#) Pulse Width High
150
0
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3
4
t
ELWL (tWLEL
W3
tWLWH (tELEH
tDVWH (tDVEH
AVWH (tAVEH
WHEH (tEHWH
)
40
40
40
0
W4
)
W5
t
)
W6
t
)
)
W7
tWHDX (tEHDX
tWHAX (tEHAX
tWHWL (tEHEL
tVPWH (tVPEH
tQVVL
0
W8
)
)
0
W9
20
200
0
5,6,7
3
W10
W11
W12
)
VPP Setup to WE# (CE#) High
VPP Hold from Valid SRD
3,8
3,8
tQVBL
WP# Hold from Valid SRD
0
November 2007
Order Number: 290701-18
Datasheet
37
NUMONYX [ NUMONYX B.V ]
