Numonyx™ StrataFlash
®
Wireless Memory
(L30)
28F128L30, 28F256L30
Datasheet
Product Features
High performance Read-While-Write/Erase
— 85 ns initial access
— 52 MHz with zero wait state, 17 ns clock-to-
data output synchronous-burst mode
— 25 ns asynchronous-page mode
— 4-, 8-, 16-, and continuous-word burst
mode
— Burst suspend
— Programmable WAIT configuration
— Buffered Enhanced Factory Programming
(BEFP) at 5 µs/byte (Typ)
— 1.8 V low-power buffered programming at
7 µs/byte (Typ)
Architecture
— Asymmetrically-blocked architecture
— Multiple partitions: 8-Mbit: 128- Mbit
devices; 16-Mbit: 256-Mbit devices
— Four 16-Kword parameter blocks: top or
bottom configurations
— 64-Kword main blocks
— Dual-operation: Read-While-Write (RWW)
or Read-While-Erase (RWE)
— Status register for partition and device
status
Density and Packaging
— 128- and 256-Mbit density in VF BGA
packages
— 128/0 and 256/0 Density in SCSP
— 16-bit wide data bus
Power
— V
CC
(core) = 1.7 V - 2.0 V
— V
CCQ
(I/O) = 2.2 V - 3.3 V
— Standby current: 30 µA (Typ) for 256-Mbit
— 4-Word synchronous read current: 16 mA
(Typ) at 52 MHz
— Automatic Power Savings mode
Security
— OTP space: 64 unique factory device
identifier bits; 64 user-programmable OTP
bits; Additional 2048 user-programmable
OTP bits
— Absolute write protection: V
PP
= GND
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Software
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
— Numonyx™ Flash Data Integrator
(Numonyx™ FDI) optimized
Quality and Reliability
— Expanded temperature: –25° C to +85° C
— Minimum 100,000 erase cycles per block
— Intel ETOX* VIII process technology (0.13
µm)
251903-11
November 2007
NUMONYX [ NUMONYX B.V ]
