NTE832 & NTE832SM
Integrated Circuit
Tone Decoder
Description:
The NTE832 and NTE832SM are general purpose tone decoders designed to provide a saturated
transistor switch to GND when an input signal is present within the passband. The circuit consists
of an I and Q detector driven by a voltage controlled oscillator which determines the center frequency
of the decoder. External components are used to independently set center frequency, bandwidth, and
output delay.
Features:
D Logic Compatible Output with 100mA Current Sinking Capability
D Bandwidth Adjustment from 0 to 14%
D Inherent Immunity to False Signals
D High Stable Center Frequency
D High Rejection of Out–Of–Band Signals and Noise
D Center Frequency Adjustable from 0.01Hz to 500kHz
D Frequecny Range Adjustable over 20:1 range by an External Resistor
D Available in Standard 8–Lead DIP (NTE832) and Surface Mount SOIC–8 (NTE832SM)
Applications:
D Touch Tone Decoder
D Precision Oscillator
D Frequency Monitoring and Control
D Wide Band FSK Demodulation
D Communications Paging Decoders
D Carrier Current Remote Controls
D Ultrasonic Controls (Remote TV, etc.)
Absolute Maximum Ratings:
Operating Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Input Voltage, VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10V to VCC +0.5V
Output Voltage, VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Note 1. The maximum junction temperature of these devices is +100°C. For operating at elevated
temperatures, devices must be derated on a thermal resistance of +187°C/W, junction–to–ambi-
ent.
NTE [ NTE ELECTRONICS ]
