Electrical Characteristics: (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown
V
I = 10µAdc, V = 0,
20
–
–
Vdc
Vdc
Vdc
Vdc
Vdc
(BR)DSX
D
5
Voltage
V
GIS
= V
= 5.0Vdc
G25
Gate 1= Source Breakdown
Voltage (Note 1)
V
V
I
= ±10mAdc, V
= ±10mAdc, V
= V = 0
±6.0
±5.0
–0.5
–0.2
±12
±12
±30
±30
(BR)G1SO G1
GIS
DS
Gate 2–Source Breakdown
I
= V = 0
D5
(BR)G2SO G2
G15
Voltage (Note 1)
Gate 1 to Source Cutoff Voltage
Gate 2 to Source Cutoff Voltage
Gate 1 Leakage Current
V
V
= 15Vdc, V
= 4.0Vdc,
= 0,
–1.5 –5.0
–1.4 –5.0
±0.04 ±10
GIS(off)
DS
G2S
I = 20µAdc
D
V
V
DS
= 15Vdc, V
G2S(off)
G15
I = 20µAdc
D
V
GIS
= ±5.0Vdc, V
= V = 0
–
–
nAdc
I
G2S
DS
G1SS
G2SS
V
G2S
= –5.0Vdc, V
= V = 0,
–
–10
µAdc
G2S
DS
T = 150°C
A
V
G2S
= ±5.0Vdc, V
= V = 0
–
–
±0.05 ±10
nAdc
Gate 2 Leakage Current
I
GIS
DS
V
G2S
= –5.0Vdc, V
= V = 0,
–
–10
µAdc
GIS
DS
T = 150°C
A
ON CHARACTERISTICS
Zero–Gate Voltage Drain
I
V
V
= 15Vdc, V
= 0,
mAdc
6.0
13
30
DSS
DS
GIS
Current (Note 2)
= 4.0Vdc
G25
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(Note 3)
|y |
V
V
= 15Vdc, V
= 0, f = 1.0kH
= 4.0Vdc,
Z
mmhos
pF
8.0
–
12.8
3.3
20
–
fe
DS
G2S
GIS
Input Capacitance
C
iss
V
DS
= 15Vdc, V = 4.0Vdc,
G2S
I = I
D
, f = 1.0MH
DSS
Z
Output Capacitance
C
oss
V
I = I
D
= 15Vdc, V
= 4.0Vdc,
Z
–
1.7
–
pF
DS
G2S
, f = 1.0MH
DSS
Reverse Transfer Capacitance
C
rss
V
= 15Vdc, V = 4.0Vdc,
G2S
0.005 0.014 0.03
pF
DS
I = 10mAdc, f = 1.0MH
D
Z
FUNCTIONAL CHARACTERISTICS
Noise Figure
NF
V
= 18Vdc, V
= 7.0Vdc,
= 7.0Vdc,
= 7.0Vdc,
–
15
5.0
0
1.8
20
–
4.5
25
dB
dB
DD
GG
GG
GG
f = 200MH
Z
Common Source Power Gain
Bandwidth
G
ps
V
DD
= 18Vdc, V
f = 200MH
Z
BW
V
DD
= 18Vdc, V
9.0
MH
Z
f = 200MH
Z
Gain Control Gate Supply
Voltage (Note 4)
V
V
DD
= 18Vdc, ∆G = –30dB,
–1.0 –3.0
Vdc
GG(GC)
ps
f = 200MH
Z
Note 1. All gate breakdown voltages are measured while the device is conducting rated gate current. This ensures
that the gate–voltage limiting network is functioning properly.
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
Note 3. This parameter must be measured with bias voltages supplied for less than 6 seconds to avoid overheating.
Note 4. ∆G is defined as the change in G from the values at V = 7.0V power gain conversion
GG
ps
pe
NTE [ NTE ELECTRONICS ]
