NTE278
Silicon NPN Transistor
Broadband RF Amp
Description:
The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband
applications requiring good linearity. Usable as a high frequency current mode switch to 200mA.
Features:
D Low Noise Figure: NF = 3.0dB Typ @ f = 200MHz
D High Current–Gain Bandwidth Product: fT = 1200MHz Min @ IC = 50mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Device Dissipation (TC = +75°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Note 1. Total Device Dissipation at TA = +25°C is 1 Watt.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
V
I = 5mA, I = 0
20
40
–
–
–
–
–
–
–
–
–
V
CEO(sus)
C
B
V
I = 5mA, R = 10Ω, Note 2
V
CER(sus)
C
BE
Collector Cutoff Current
I
V
= 15V, I = 0
20
5
µA
mA
mA
µA
CEO
CE
CE
CE
BE
B
I
V
V
V
= 15V, V = –1.5V, T = +150°C
–
CEX
BE
C
= 35V, V = –1.5V
–
5
BE
Emitter Cutoff Current
I
= 3V, I = 0
–
100
EBO
C
Note 2. Pulsed through a 25mH inductor; 50% Duty Cycle.
NTE [ NTE ELECTRONICS ]
