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NTE278 参数 Datasheet PDF下载

NTE278图片预览
型号: NTE278
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN晶体管宽带射频放大器 [Silicon NPN Transistor Broadband RF Amp]
分类和应用: 晶体射频放大器小信号双极晶体管射频小信号双极晶体管
文件页数/大小: 2 页 / 26 K
品牌: NTE [ NTE ELECTRONICS ]
 浏览型号NTE278的Datasheet PDF文件第2页  
NTE278  
Silicon NPN Transistor  
Broadband RF Amp  
Description:  
The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband  
applications requiring good linearity. Usable as a high frequency current mode switch to 200mA.  
Features:  
D Low Noise Figure: NF = 3.0dB Typ @ f = 200MHz  
D High Current–Gain Bandwidth Product: fT = 1200MHz Min @ IC = 50mA  
Absolute Maximum Ratings:  
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V  
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V  
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V  
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA  
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA  
Total Device Dissipation (TC = +75°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C  
Note 1. Total Device Dissipation at TA = +25°C is 1 Watt.  
Electrical Characteristics: (TC = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
Min  
Typ Max Unit  
OFF Characteristics  
Collector–Emitter Sustaining Voltage  
V
I = 5mA, I = 0  
20  
40  
V
CEO(sus)  
C
B
V
I = 5mA, R = 10, Note 2  
V
CER(sus)  
C
BE  
Collector Cutoff Current  
I
V
= 15V, I = 0  
20  
5
µA  
mA  
mA  
µA  
CEO  
CE  
CE  
CE  
BE  
B
I
V
V
V
= 15V, V = 1.5V, T = +150°C  
CEX  
BE  
C
= 35V, V = –1.5V  
5
BE  
Emitter Cutoff Current  
I
= 3V, I = 0  
100  
EBO  
C
Note 2. Pulsed through a 25mH inductor; 50% Duty Cycle.