10
Absolute Maximum Ratings
0 C to
a
70 C
b
65 C to
a
150 C
b
0 5V to
a
7 0V
Temperature Under Bias
Storage Temperature
All Input or Output Voltages
with Respect to V
SS
Power Dissipation
Note
Maximum ratings indicate limits beyond which perma-
nent damage may occur Continuous operation at these lim-
its is not intended and should be limited to those conditions
specified under DC electrical characteristics
1W
20
DC Electrical Characteristics
Parameter
Clock Input Low Voltage
Clock Input High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Average Power Supply
Current
I
OL
e
1 6 mA on all (Note 1)
I
OH
e b
1 0 mA (Note 1)
V
DD
e
5 5V T
A
e
25 C
No Loads on output
SIN DSR DCD
CTS RI
e
2 0V
All other inputs
e
0 8V
V
DD
e
5 5V V
SS
e
0V
All other pins floating
V
IN
e
0V 5 5V
V
DD
e
5 5V V
SS
e
0V
V
OUT
e
0V 5 25V
1) Chip deselected
2) WRITE mode
chip selected
24
Conditions
Min
b
0 5
T
A
e
0 C to
a
70 C V
DD
e a
5V
g
10% V
SS
e
0V unless otherwise specified
Symbol
V
ILX
V
IHX
V
IL
V
IH
V
OL
V
OH
I
CC
(AV)
Max
08
V
DD
08
V
DD
04
Units
V
V
V
V
V
V
20
b
0 5
20
15
mA
I
IL
I
CL
I
OZ
Input Leakage
Clock Leakage
TRI-STATE Leakage
g
10
g
10
mA
mA
g
20
mA
V
ILMR
V
IHMR
MR Schmitt V
IL
MR Schmitt V
IH
20
08
V
V
Note 1
Does not apply to XOUT
Capacitance
T
A
e
25 C
Symbol
C
XIN
C
XOUT
C
IN
C
OUT
C
I O
V
DD
e
V
SS
e
0V
Conditions
Min
Typ
7
f
c
e
1 MHz
Unmeasured pins
returned to V
SS
7
5
6
10
Max
9
9
7
8
12
Units
pF
pF
pF
pF
pF
Parameter
Clock Input Capacitance
Clock Output Capacitance
Input Capacitance
Output Capacitance
Input Output Capacitance
3
NSC [ NATIONAL SEMICONDUCTOR ]
