Absolute Maximum Ratings (Note 1)
Operating Conditions
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Package
N
M
Power Dissipation
(Note 4)
500 mW
500 mW
±
32V or 16V
Supply Voltage
±
LP2902
26V or 13V
Tj Max
150˚C
90˚C/W
(Note 5)
150˚C
140˚C/W
(Note 5)
Differential Input Voltage
LP2902
32V
26V
θja
Operating Temp. Range
Storage Temp. Range
Soldering
Input Voltage (Note 2)
LP2902
−0.3V to 32V
−0.3V to 26V
Continuous
−65˚C ≤ T ≤ 150˚C
Output Short-Circuit to GND
(One Amplifier) (Note 3)
V+ ≤ 15V and TA 25˚C
ESD Susceptibility (Note 10)
Information (10 sec.)
Vapor Phase (60 sec.)
Infrared (15 sec.)
300˚C
260˚C
215˚C
220˚C
=
±
500V
Electrical Characteristics (Note 6)
LP2902 (Note 9)
LP324
Tested
Symbol
Parameter
Conditions
Tested
Limit
Design
Limit
Design
Limit
(Note 8)
9
Units
Typ
Typ
2
Limit
(Note 7)
4
Limits
(Note 7)
4
(Note 8)
10
Vos
Input Offset
Voltage
2
2
mV
(Max)
nA
Ib
Input Bias
Current
20
4
40
8
2
10
2
20
4
(Max)
nA
Ios
Input Offset
Current
0.5
70
0.2
100
(Max)
V/mV
(Min)
=
Avol
Voltage
RL 10k
40
30
50
40
Gain
to GND
V+ 30V
=
CMRR
PSRR
Common
Mode Rej.
Ratio
V+ 30V
=
90
90
80
80
75
75
90
90
80
80
75
75
dB
0V ≤ Vcm
(Min)
+
<
Vcm V − 1.5
V+ 5V to 30V
dB
=
Power
Supply Rej.
Ratio
(Min)
= ∞
Is
Supply
Current
Output
RL
85
150
3.4
250
85
150
3.4
250
µA
(Max)
V
Vo
IL 350 µA
3.6
V+−1.9V
3.6
V+−1.9V
=
Voltage
Swing
to GND.
(Min)
=
Vcm 0V
=
to V+
IL 350 µA
0.7
10
5
0.8
7
1.0
4
0.7
10
5
0.8
7
1.0
4
V
(Max)
=
Vcm 0V
=
Iout
Output
Vo 3V
mA
=
Source
Source
Current
Output
Vin (diff) 1V
(Min)
=
Iout
Vo 1.5V
4
3
4
3
mA
=
Sink
Sink
Vin (diff) 1V
(Min)
Current
Output
=
Iout
Vo 1.5V
4
2
1
4
2
1
mA
=
Sink
Sink
Vcm 0V
(Min)
Current
Output
=
Isource
Vin (diff) 1V
20
15
10
25
35
30
35
45
20
15
10
25
35
30
35
45
mA
Short to GND
Output
Short to V+
(Max)
mA
=
Vin (diff) 1V
Isink
(Max)
µV/C˚
Vos
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