Electrical Characteristics
(Note 3) (Continued)
Parameter
Supply Voltage
Rejection Ratio
Transient Response
Rise Time
Overshoot
Bandwidth (Note 4)
Slew Rate
Supply Current Amp
Power Consumption Amp
Conditions
V
S
e
g
20V to V
S
e
g
5V
R
S
s
50X
R
S
s
10 kX
T
A
e
25 C Unity Gain
0 25
60
T
A
e
25 C
T
A
e
25 C Unity Gain
T
A
e
25 C
T
A
e
25 C
V
S
e
g
20V
V
S
e
g
15V
V
S
e
g
20V
T
A
e
T
AMIN
T
A
e
T
AMAX
V
S
e
g
20V
T
A
e
T
AMIN
T
A
e
T
AMAX
V
S
e
g
15V
T
A
e
T
AMIN
T
A
e
T
AMAX
80
0 437
03
15
07
25
150
50
165
135
150
150
150
60
45
100
75
85
50
85
05
17
28
05
17
28
08
20
03
5
03
5
ms
%
MHz
V
ms
mA
LM747A LM747E
Min
86
Typ
96
77
96
77
96
Max
Min
LM747
Typ
Max
Min
LM747C
Typ
Max
Units
dB
mW
LM747A
mW
LM747E
mW
LM747
mW
Note 1
The maximum junction temperature of the LM747C LM747E is 100 C For operating at elevated temperatures devies in the TO-5 package must be
derated based on a thermal resistance of 150 C W junction to ambient or 45 C W junction to case The thermal resistance of the dual-in-line package is 100 C
W junction to ambient
Note 2
For supply voltages less than
g
15V the absolute maximum input voltage is equal to the supply voltage
Note 3
These specifications apply for
g
5V
s
V
S
s g
20V and
b
55 C
s
T
A
s
125 C for the LM747A and 0 C
s
T
A
s
70 C for the LM747E unless otherwise
specified The LM747 and LM747C are specified for V
S
e
g
15V and
b
55 C
s
T
A
s
125 C and 0 C
s
T
A
s
70 C respectively unless otherwise specified
Note 4
Calculated value from 0 35 Rise Time (ms)
Schematic Diagram
(Each Amplifier)
TL H 11479 – 1
Note
Numbers in parentheses are pin numbers for amplifier B DIP only
3
NSC [ NATIONAL SEMICONDUCTOR ]
