LM56
Absolute Maximum Ratings
Input Voltage
Input Current at any pin (Note 2)
Package Input Current(Note 2)
Package Dissipation at T
A
= 25˚C
ESD Susceptibility (Note 5)
Human Body Model - Pin 3 Only:
All other pins
Machine Model
Storage Temperature
800V
1000V
125V
−65˚C to + 150˚C
12V
5 mA
20 mA
900 mW
Operating Ratings
Operating Temperature
Range
LM56BIM, LM56CIM
Positive Supply Voltage (V
+
)
Maximum V
OUT1
and V
OUT2
T
MIN
≤
T
A
≤
T
MAX
−40˚C
≤
T
A
≤
+125˚C
+2.7V to +10V
+10V
Soldering process must comply with National Semiconduc-
tor’s Reflow Temperature Profile specifications. Refer to
www.national.com/packaging.(Note
LM56 Electrical Characteristics
The following specifications apply for V
+
= 2.7 V
DC
, and V
REF
load current = 50 µA unless otherwise specified.
Boldface limits
apply for T
A
= T
J
= T
MIN
to T
MAX
;
all other limits T
A
= T
J
= 25˚C unless otherwise specified.
Typical
Symbol
Temperature Sensor
Trip Point Accuracy (Includes
V
REF
, Comparator Offset, and
Temperature Sensitivity errors)
Trip Point Hysteresis
+25˚C
≤
T
A
≤
+85˚C
−40˚C
≤
T
A
≤
+125˚C
T
A
= −40˚C
T
A
= +25˚C
T
A
= +85˚C
T
A
= +125˚C
Internal Temperature
Sensitivity
Temperature Sensitivity Error
Output Impedance
Line Regulation
−1 µA
≤
I
L
≤
+40 µA
+3.0V
≤
V
≤
+10V,
+25 ˚C
≤
T
A
≤
+85 ˚C
+
LM56BIM
Limits
LM56CIM
Limits
Units
(Limits)
Parameter
Conditions
±
2
±
2
±
3
4
5
6
6
+6.20
3
6
3.5
6.5
4.5
7.5
4
8
±
3
±
3
±
4
3
6
3.5
6.5
4.5
7.5
4
8
˚C (max)
˚C (max)
˚C (max)
˚C (min)
˚C (max)
˚C (min)
˚C (max)
˚C (min)
˚C (max)
˚C (min)
˚C (max)
mV/˚C
±
2
±
3
1500
±
3
±
4
1500
˚C (max)
˚C (max)
Ω
(max)
mV/V (max)
mV/V (max)
mV (max)
nA (max)
V
V
±
0.36
±
0.61
±
2.3
150
V
+
− 1
GND
2
1.250V
8
300
±
0.36
±
0.61
±
2.3
300
+3.0V
≤
V
+
≤
+10V,
−40 ˚C
≤
T
A
<
25 ˚C
+2.7V
≤
V
+
≤
+3.3V
V
T1
and V
T2
Analog Inputs
I
BIAS
V
IN
V
OS
V
REF
Output
V
REF
V
REF
Nominal
V
REF
Error
∆V
REF
/∆V
+
∆V
REF
/∆I
L
Line Regulation
Load Regulation Sourcing
+3.0V
≤
V
+
≤
+10V
+2.7V
≤
V
≤
+3.3V
+
Analog Input Bias Current
Analog Input Voltage Range
Comparator Offset
8
mV (max)
V
±
1
±
12.5
0.13
0.15
0.25
1.1
0.15
±
1
±
12.5
0.25
1.1
0.15
% (max)
mV (max)
mV/V (max)
mV (max)
mV/µA (max)
+30 µA
≤
I
L
≤
+50 µA
3
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NSC [ NATIONAL SEMICONDUCTOR ]
