LM4040
Absolute Maximum Ratings
Machine Model (Note 3)
200V
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Reverse Current
Forward Current
Power Dissipation (T
A
= 25˚C) (Note 2)
M3 Package
Z Package
M7 Package
Storage Temperature
Lead Temperature
M3 Package
Vapor phase (60 seconds)
Infrared (15 seconds)
Z Package
Soldering (10 seconds)
ESD Susceptibility
Human Body Model (Note 3)
2 kV
+260˚C
+215˚C
+220˚C
306 mW
550 mW
241 mW
−65˚C to +150˚C
20 mA
10 mA
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
Operating Ratings
(Notes 1, 2)
Temperature Range
Industrial Temperature Range
Extended Temperature Range
Reverse Current
LM4040-2.0
LM4040-2.5
LM4040-3.0
LM4040-4.1
LM4040-5.0
LM4040-8.2
LM4040-10.0
60 µA to 15 mA
60 µA to 15 mA
62 µA to 15 mA
68 µA to 15 mA
74 µA to 15 mA
91 µA to 15 mA
100 µA to 15 mA
(T
min
≤
T
A
≤
T
max
)
−40˚C
≤
T
A
≤
+85˚C
−40˚C
≤
T
A
≤
+125˚C
LM4040-2.0
Electrical Characteristics (Industrial Temperature Range)
Boldface limits apply for T
A
= T
J
= T
MIN
to T
MAX
;
all other limits T
A
= T
J
= 25˚C. The grades A and B designate initial Re-
verse Breakdown Voltage tolerances of
±
0.1% and
±
0.2%, respectively.
LM4040AIM3
LM4040AIZ
(Limit)
LM4040BIM3
LM4040BIZ
LM4040BIM7
(Limit)
Symbol
Parameter
Conditions
Typical
Units
(Limit)
V
R
Reverse Breakdown Voltage I
R
= 100 µA
Reverse Breakdown Voltage I
R
= 100 µA
Tolerance
2.048
V
±
2.0
±
15
45
60
65
±
4.1
±
17
mV (max)
mV (max)
µA
I
RMIN
Minimum Operating Current
60
65
µA (max)
µA (max)
ppm/˚C
∆V
R
/∆T
Average Reverse Breakdown I
R
= 10 mA
Voltage Temperature
I
R
= 1 mA
Coefficient
I
R
= 100 µA
±
20
±
15
±
15
0.3
0.8
1.0
2.5
6.0
8.0
6.0
8.0
0.8
0.8
1.0
±
100
±
100
ppm/˚C (max)
ppm/˚C
mV
mV (max)
mV (max)
mV
mV (max)
mV (max)
Ω
Ω
(max)
µV
rms
∆V
R
/∆I
R
Reverse Breakdown Voltage I
RMIN
≤
I
R
≤
1 mA
Change with Operating
Current Change (Note *NO
TARGET FOR FNXref
NS4914*)
1 mA
≤
I
R
≤
15 mA
Z
R
e
N
Reverse Dynamic
Impedance
Wideband Noise
I
R
= 1 mA, f = 120 Hz,
I
AC
= 0.1 I
R
I
R
= 100 µA
10 Hz
≤
f
≤
10 kHz
0.3
0.8
35
5
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