Absolute Maximum Ratings
(T
A
e
25 C)
If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office
Distributors for availability and specifications
LM3045
LM3046 LM3086
Each
Total
Each
Total
Units
Transistor
Package
Transistor
Package
Power Dissipation
T
A
e
25 C
300
750
300
750
mW
T
A
e
25 C to 55 C
300
750
mW
T
A
l
55 C
Derate at 6 67
mW C
T
A
e
25 C to 75 C
300
750
mW
T
A
l
75 C
Derate at 8
mW C
Collector to Emitter Voltage V
CEO
15
15
V
Collector to Base Voltage V
CBO
20
20
V
Collector to Substrate Voltage V
CIO
(Note 1)
20
20
V
5
5
V
Emitter to Base Voltage V
EBO
50
50
mA
Collector Current I
C
b
55 C to
a
125 C
b
40 C to
a
85 C
Operating Temperature Range
b
65 C to
a
150 C
b
65 C to
a
85 C
Storage Temperature Range
Soldering Information
Dual-In-Line Package Soldering (10 Sec )
260 C
260 C
Small Outline Package
Vapor Phase (60 Seconds)
215 C
Infrared (15 Seconds)
220 C
See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount
devices
Electrical Characteristics
(T
A
e
25 C unless otherwise specified)
Limits
Parameter
Collector to Base Breakdown Voltage (V
(BR)CBO
)
Collector to Emitter Breakdown Voltage (V
(BR)CEO
)
Collector to Substrate Breakdown
Voltage (V
(BR)CIO
)
Emitter to Base Breakdown Voltage (V
(BR)EBO
)
Collector Cutoff Current (I
CBO
)
Collector Cutoff Current (I
CEO
)
Static Forward Current Transfer
Ratio (Static Beta) (h
FE
)
Conditions
I
C
e
10
mA
I
E
e
0
I
C
e
1 mA I
B
e
0
I
C
e
10
mA
I
CI
e
0
I
E
10
mA
I
C
e
0
V
CB
e
10V I
E
e
0
V
CE
e
10V I
B
e
0
V
CE
e
3V
I
C
e
10 mA
I
C
e
1 mA
I
C
e
10
mA
40
LM3045 LM3046
Min
20
15
20
5
Typ
60
24
60
7
0 002
100
100
54
03
0 715
0 800
0 45
0 45
V
CE
e
3V I
C
e
1 mA
b
1 9
b
1 9
Limits
LM3086
Min
20
15
20
5
40
05
100
40
100
54
2
0 715
0 800
5
5
mA
V
mV
mV
Typ
60
24
60
7
0 002
100
5
Max
V
V
V
V
nA
mA
Units
Max
Input Offset Current for Matched
Pair Q
1
and Q
2
l
I
O1
b
I
IO2
l
Base to Emitter Voltage (V
BE
)
Magnitude of Input Offset Voltage for
Differential Pair
l
V
BE1
b
V
BE2
l
Magnitude of Input Offset Voltage for Isolated
Transistors
l
V
BE3
b
V
BE4
l l
V
BE4
b
V
BE5
l
l
V
BE5
b
V
BE3
l
Temperature Coefficient of Base to
Emitter Voltage
DV
BE
DT
Collector to Emitter Saturation Voltage (V
CE(SAT)
)
V
CE
e
3V I
C
e
1 mA
V
CE
e
3V
I
E
e
1 mA
I
E
e
10 mA
V
CE
e
3V I
C
e
1 mA
V
CE
e
3V I
C
e
1 mA
J
mV C
V
mV
C
I
B
e
1 mA I
C
e
10 mA
V
CE
e
3V I
C
e
1 mA
0 23
11
0 23
Temperature Coefficient of
Input Offset Voltage
DV
10
DT
Note 1
The collector of each transistor of the LM3045 LM3046 and LM3086 is isolated from the substrate by an integral diode The substrate (terminal 13) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action
J
2
NSC [ NATIONAL SEMICONDUCTOR ]
