FDS6898A 参数 Datasheet PDF下载

LM2747

Electrical Characteristics

(Continued)

V

CC

= 3.3V unless otherwise indicated. Typicals and limits appearing in plain type apply for T

A

= T

J

= 25˚C. Limits appearing in

boldface type apply over full Operating Temperature Range. Datasheet min/max specification limits are guaranteed by design,

test, or statistical analysis.

Symbol

Parameter

BOOT Pin Quiescent Current

High-Side MOSFET Driver

Pull-Up ON resistance

High-Side MOSFET Driver

Pull-Down ON resistance

Conditions

V

BOOT

= 12V, V

SD

= 0

V

BOOT

= 5V

@

350 mA Sourcing

350 mA Sinking

Min

Typ

18

2.7

0.8

2.7

0.8

Max

90

Units

µA

Ω

Ω

Ω

Ω

GATE DRIVE

I

Q-BOOT

R

HG_UP

R

HG_DN

R

LG_UP

R

LG_DN

OSCILLATOR

R

FADJ

= 750 kΩ

PWM Frequency

f

SW

External Synchronizing Signal

Frequency

SYNC

L

SYNC

H

D

MAX

Synchronization Signal Low

Threshold

Synchronization Signal High

Threshold

Max High-Side Duty Cycle

R

FADJ

= 100 kΩ

R

FADJ

= 42.2 kΩ

R

FADJ

= 18.7 kΩ

Voltage Swing = 0V to V

CC

f

SW

= 250 kHz to 1 MHz

f

SW

= 250 kHz to 1 MHz

f

SW

= 300 kHz

f

SW

= 600 kHz

f

SW

= 1 MHz

V

FB

= 0.575V, V

BOOT

= 3.3V

V

SD

Rising

V

FB

= 0.575V, V

BOOT

= 3.3V

V

SD

Falling

V

SD

Rising

V

SD

Falling

V

FB

Falling

V

FB

Rising

V

FB

Falling

V

FB

Rising

0.8

0.408

0.677

0.434

0.710

60

90

0.457

0.742

0.232

1.3

2

86

78

67

1.1

250

475

50

300

600

1000

1000

1

V

V

725

kHz

Low-Side MOSFET Driver Pull-Up

V

BOOT

= 5V

@

350 mA Sourcing

ON resistance

Low-Side MOSFET Driver

Pull-Down ON resistance

350 mA Sinking

%

LOGIC INPUTS AND OUTPUTS

V

STBY-IH

V

STBY-IL

V

SD-IH

V

SD-IL

V

PWGD-TH-LO

V

PWGD-TH-HI

V

PWGD-HYS

Standby High Trip Point

Standby Low Trip Point

SD Pin Logic High Trip Point

SD Pin Logic Low Trip Point

PWGD Pin Trip Points

PWGD Pin Trip Points

PWGD Hysteresis

V

V

V

V

V

V

mV

Note 1:

Absolute maximum ratings indicate limits beyond which damage to the device may occur.

Operating ratings

indicate conditions for which the device

operates correctly.

Operating Ratings

do not imply guaranteed performance limits.

Note 2:

The power MOSFETs can run on a separate 1V to 14V rail (Input voltage, V

IN

). Practical lower limit of V

IN

depends on selection of the external MOSFET.

See the MOSFET GATE DRIVERS section under Application Information for further details.

Note 3:

ESD using the human body model which is a 100pF capacitor discharged through a 1.5 kΩ resistor into each pin.

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