DS34C86T
Absolute Maximum Ratings
(Notes 1,
Maximum Power Dissipation at 25˚C (Note 5)
Plastic “N” Package
SOIC Package
Current Per Output
1645 mW
1190 mW
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC
)
Input Common Mode Range (V
CM
)
Differential Input Voltage (V
DIFF
)
Enable Input Voltage (V
IN)
±
25 mA
7V
This device does not meet 2000V ESD rating.
±
14V
±
14V
7V
−65˚C to
+150˚C
260˚C
Operating Conditions
Min
Supply Voltage (V
CC
)
Operating Temperature Range (T
A
)
Enable Input Rise or Fall Times
4.50
−40
Max
5.50
+85
500
Unit
V
˚C
ns
Storage Temperature Range (T
STG
)
Lead Temperature (Soldering 4
sec)
DC Electrical Characteristics
V
CC
= 5V
±
10% (unless otherwise specified)
Symbol
V
TH
R
IN
I
IN
V
OH
V
OL
V
IH
V
IL
I
OZ
I
I
I
CC
V
HYST
Parameter
Minimum Differential
Input Voltage
Input Resistance
Input Current
(Under Test)
Minimum High Level
Output Voltage
Maximum Low Level
Output Voltage
Minimum Enable High
Input Level Voltage
Maximum Enable Low
Input Level Voltage
Maximum TRI-STATE
Output Leakage Current
Maximum Enable Input
Current
Quiescent Power
Supply Current
Input Hysteresis
Conditions
V
OUT
= V
OH
Min
−200
5.0
Typ
35
6.8
+1.1
−2.0
Max
+200
10
+1.5
−2.5
Units
mV
kΩ
mA
mA
V
or V
OL
−7V
<
V
CM
<
+7V
V
IN
= −7V, +7V
(Other Input = GND)
V
IN
= +10V, Other Input = GND
V
IN
= −10V, Other Input = GND
V
CC
= Min., V
(DIFF)
= +1V
I
OUT
= −6.0 mA
V
CC
= Max., V
(DIFF)
= −1V
I
OUT
= 6.0 mA
2.0
0.8
V
OUT
= V
V
IN
= V
or GND,
V
V
0.2
0.3
V
3.8
4.2
CC
TRI-STATE Control = V
IL
CC
±
0.5
or GND
16
60
±
5.0
±
1.0
23
µA
µA
mA
mV
V
CC
= Max., V
(DIFF)
= +1V
V
CM
= 0V
AC Electrical Characteristics
V
CC
t
PLH
,
t
PHL
t
RISE
,
t
FALL
t
PLZ
,
t
PHZ
www.national.com
= 5V
±
10% (unless otherwise specified) (Figures
Parameter
Propagation Delay
Input to Output
Output Rise and
Fall Times
Propagation Delay
ENABLE to Output
Conditions
C
L
= 50 pF
V
DIFF
= 2.5V
V
CM
= 0V
C
L
= 50 pF
V
DIFF
= 2.5V
V
CM
= 0V
C
L
= 50 pF
R
L
= 1000Ω
2
Symbol
Min
Typ
19
Max
30
Units
ns
4
9
ns
13
18
ns
NSC [ NATIONAL SEMICONDUCTOR ]
