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54ABT652WQML 参数 Datasheet PDF下载

54ABT652WQML图片预览
型号: 54ABT652WQML
PDF下载: 下载PDF文件 查看货源
内容描述: [IC ABT SERIES, 8-BIT REGISTERED TRANSCEIVER, TRUE OUTPUT, CDFP24, CERPACK-24, Bus Driver/Transceiver]
分类和应用:
文件页数/大小: 17 页 / 363 K
品牌: NSC [ NATIONAL SEMICONDUCTOR ]
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Absolute Maximum Ratings
(Note 2)
Storage Temperature
Ambient Temperature under Bias
Junction Temperature under Bias
Ceramic
V
CC
Pin Potential to
Ground Pin
Input Voltage (Note 3)
Input Current (Note 3)
Voltage Applied to Any Output
in the Disable or
or Power-Off State
in the HIGH State
Current Applied to Output
in LOW State (Max)
DC Latchup Source Current
−65˚C to +150˚C
−55˚C to +125˚C
−55˚C to +175˚C
−0.5V to +7.0V
−0.5V to +7.0V
−30 mA to +5.0 mA
Over Voltage Latchup (I/O)
10V
Recommended Operating
Conditions
Free Air Ambient Temperature
Military
Supply Voltage
Military
Minimum Input Edge Rate
Data Input
Enable Input
Clock Input
−55˚C to +125˚C
+4.5V to +5.5V
(∆V/∆t)
50 mV/ns
20 mV/ns
100 mV/ns
−0.5V to +5.5V
−0.5V to V
CC
twice the rated I
OL
(mA)
−500 mA
Note 2:
Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under these
conditions is not implied.
Note 3:
Either voltage limit or current limit is sufficient to protect inputs.
DC Electrical Characteristics
Symbol
V
IH
V
IL
V
CD
V
OH
V
OL
I
IH
I
BVI
I
BVIT
I
IL
I
IH
+ I
OZH
I
IL
+ I
OZL
I
OS
I
CEX
I
CCH
I
CCL
I
CCZ
I
CCT
Parameter
Input HIGH Voltage
Input LOW Voltage
Input Clamp Diode Voltage
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH Current
Input HIGH Current
Breakdown Test
Input HIGH Current
Breakdown Test (I/O)
Input LOW Current
Output Leakage Current
Output Leakage Current
Output Short-Circuit Current
Output HIGH Leakage Current
Power Supply Current
Power Supply Current
Power Supply Current
Additional I
CC
/Input
−50
−2
50
−50
−180
50
250
30
250
2.5
µA
µA
µA
mA
µA
µA
mA
µA
mA
Max
0V–5.5V
0V–5.5V
Max
Max
Max
Max
Max
Max
V
IN
= 0.5V (Non-I/O Pins) (Note 4)
V
IN
= 0.0V (Non-I/O Pins)
V
OUT
= 2.7V (A
n
, B
n
);
OEBA = 2.0V and OEAB = GND = 2.0V
V
OUT
= 0.5V (A
n
, B
n
);
OEBA = 2.0V and OEAB = GND = 2.0V
V
OUT
= 0V (A
n
, B
n
)
V
OUT
= V
CC
(A
n
, B
n
)
All Outputs HIGH
All Outputs LOW
Outputs TRI-STATE;
All others at V
CC
or GND
V
I
= V
CC
− 2.1V
All others at V
CC
or GND
Note 4:
Guaranteed but not tested.
Note 5:
For 8 outputs toggling, I
CCD
<
1.4 mA/MHz.
Note 6:
Guaranteed, but not tested.
ABT652
Min Typ
2.0
0.8
−1.2
2.5
2.0
0.55
2
7
100
Max
Units
V
V
V
V
V
µA
µA
µA
V
CC
Conditions
Recognized HIGH Signal
Min
Min
Min
Max
Max
Max
Recognized LOW Signal
I
IN
= −18 mA (Non I/O Pins)
I
OH
= −3 mA, (A
n
, B
n
)
I
OH
= −24 mA, (A
n
, B
n
)
I
OL
= 48 mA, (A
n
, B
n
)
V
IN
= 2.7V (Non-I/O Pins) (Note 4)
V
IN
= V
CC
(Non-I/O Pins)
V
IN
= 7.0V (Non-I/O Pins)
V
IN
= 5.5V (A
n
, B
n
)
54ABT
54ABT
54ABT
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