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54ABT646F 参数 Datasheet PDF下载

54ABT646F图片预览
型号: 54ABT646F
PDF下载: 下载PDF文件 查看货源
内容描述: 八路收发器和三态输出寄存器 [Octal Transceivers and Registers with TRI-STATE Outputs]
分类和应用:
文件页数/大小: 14 页 / 322 K
品牌: NSC [ NATIONAL SEMICONDUCTOR ]
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Absolute Maximum Ratings
(Note 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Storage Temperature
Ambient Temperature under Bias
Junction Temperature under Bias
Ceramic
V
CC
Pin Potential to Ground Pin
Input Voltage (Note 3)
Input Current (Note 3)
Voltage Applied to Any Output
in the Disable or
Power-Off State
in the HIGH State
Current Applied to Output
in LOW State (Max)
DC Latchup Source Current
−65˚C to +150˚C
−55˚C to +125˚C
−55˚C to +175˚C
−0.5V to +7.0V
−0.5V to +7.0V
−30 mA to +5.0 mA
Over Voltage Latchup (I/O)
10V
Recommended Operating
Conditions
Free Air Ambient Temperature
Military
Supply Voltage
Military
Minimum Input Edge Rate
Data Input
Enable Input
Clock Input
−55˚C to +125˚C
+4.5V to +5.5V
(∆V/∆t)
50 mV/ns
20 mV/ns
100 mV/ns
−0.5V to +5.5V
−0.5V to V
CC
twice the rated I
OL
(mA)
−500 mA
Note 2:
Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under these
conditions is not implied.
Note 3:
Either voltage limit or current limit is sufficient to protect inputs.
DC Electrical Characteristics
Symbol
V
IH
V
IL
V
CD
V
OH
V
OL
V
ID
I
IH
I
BVI
I
BVIT
I
IL
I
IH
+ I
OZH
I
IL
+ I
OZL
I
OS
I
CEX
I
ZZ
I
CCH
I
CCL
I
CCZ
I
CCT
I
CCD
Parameter
Input HIGH Voltage
Input LOW Voltage
Input Clamp Diode Voltage
Output HIGH
Voltage
Output LOW
Voltage
54ABT
54ABT
54ABT
4.75
5
5
Input HIGH Current
Breakdown Test
Input HIGH Current
Breakdown Test (I/O)
Input LOW Current
Output Leakage Current
Output Leakage Current
Output Short-Circuit Current
Output HIGH Leakage Current
Bus Drainage Test
Power Supply Current
Power Supply Current
Power Supply Current
Additional I
CC
/Input
Dynamic I
CC
(Note 5)
No Load
−100
7
100
−5
−5
50
−50
−275
50
100
250
30
50
2.5
0.18
µA
µA
mA
µA
µA
µA
mA
µA
mA
mA/MHz
0V–5.5V
0V–5.5V
Max
Max
0.0V
Max
Max
Max
Max
Max
µA
µA
µA
Max
Max
Max
2.5
2.0
0.55
V
V
µA
2.0
0.8
−1.2
ABT646
Min Typ
Max
V
V
V
V
Min
Min
0.0
Max
Min
Recognized HIGH Signal
Recognized LOW Signal
I
IN
= −18 mA (Non I/O Pins)
I
OH
= −3 mA, (A
n
, B
n
)
I
OH
= −24 mA, (A
n
, B
n
)
I
OL
= 48 mA, (A
n
, B
n
)
I
ID
= 1.9 µA, (Non-I/O Pins)
All Other Pins Grounded
V
IN
= 2.7V (Non-I/O Pins) (Note 5)
V
IN
= V
CC
(Non-I/O Pins)
V
IN
= 7.0V (Non-I/O Pins)
V
IN
= 5.5V (A
n
, B
n
)
V
IN
= 0.5V (Non-I/O Pins) (Note 5)
V
IN
= 0.0V (Non-I/O Pins)
V
OUT
= 2.7V (A
n
, B
n
); OE = 2.0V
V
OUT
= 0.5V (A
n
, B
n
); OE = 2.0V
V
OUT
= 0V (A
n
, B
n
)
V
OUT
= V
CC
(A
n
, B
n
)
V
OUT
= 5.5V (A
n
, B
n
);
All Others GND
All Outputs HIGH
All Outputs LOW
Outputs TRI-STATE; All Others GND
V
I
= V
CC
− 2.1V
All Other Outputs at V
CC
or GND
Outputs Open
OE and DIR = GND,
Non-I/O = GND or V
CC
(Note 4)
One Bit toggling, 50% duty cycle
Units
V
CC
Conditions
Input Leakage Test
Input HIGH Current
5
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