Integrated Functions (Continued)
ACT — The activate command is used to open a row in a
particular bank for a subsequent access. The value on the
BA lines selects the bank, and the address on the MA
lines selects the row. This row remains open for accesses
until a precharge command is issued to that bank. A pre-
charge command must be issued before opening a differ-
ent row in the same bank.
REF — Auto refresh is used during normal operation and
is analogous to the CAS-before-RAS (CBR) refresh in
conventional DRAMs.During auto refresh the address bits
are "don’t care". The memory controller precharges all
banks prior to an auto refresh cycle. Auto refresh cycles
are issued approximately 15 µs apart.
The self refresh command is used to retain data in the
SDRAMs even when the rest of the system is powered
down. The self refresh command is similar to an auto
refresh command except CKE is disabled (low). The
memory controller issues a self refresh command during
3V Suspend mode when all the internal clocks are
stopped.
READ — The read command is used to initiate a burst
read access to an active row. The value on the BA lines
select the component bank, and the address provided by
the MA lines select the starting column location. The
memory controller does not perform auto precharge dur-
ing read operations. Valid data-out from the starting col-
umn address is available following the CAS latency after
the read command. The DQM signals are asserted low
during read operations.
4.3.3.1 SDRAM Initialization Sequence
After the clocks have started and stabilized, the memory
controller SDRAM initialization sequence begins:
WRT — The write command is used to initiate a burst
write access to an active row. The value on the BA liens
select the component bank, and the address provided by
the MA lines select the starting column location. The
memory controller does not perform auto precharge dur-
ing write operations. This leaves the page open for subse-
quent accesses. Data appearing on the MD lines is
written to the DQM logic level appearing coincident with
the data. If the DQM signal is registered low, the corre-
sponding data will be written to memory. If the DQM is
driven high, the corresponding data will be ignored, and a
write will not be executed to that location.
1) Precharge all component banks
2) Perform eight refresh cycles
3) Perform an MRS cycle
4) Perform eight refresh cycles
This sequence is compatible with the majority of SDRAMs
available from the various vendors.
Revision 3.1
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