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27C256 参数 Datasheet PDF下载

27C256图片预览
型号: 27C256
PDF下载: 下载PDF文件 查看货源
内容描述: 262,144位( 32K ×8 )高性能CMOS EPROM [262,144-Bit (32K x 8) High Performance CMOS EPROM]
分类和应用: 可编程只读存储器电动程控只读存储器
文件页数/大小: 12 页 / 185 K
品牌: NSC [ NATIONAL SEMICONDUCTOR ]
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Programming Characteristics
(Notes 1
Symbol
t
AS
t
OES
t
VPS
t
VCS
t
DS
t
AH
t
DH
t
DF
t
PW
t
OE
I
PP
I
CC
T
A
V
CC
V
PP
t
FR
V
IL
V
IH
t
IN
t
OUT
Parameter
Address Setup Time
OE Setup Time
V
PP
Setup Time
V
CC
Setup Time
Data Setup Time
Address Hold Time
Data Hold Time
Output Enable to Output
Float Delay
Program Pulse Width
Data Valid from OE
V
PP
Supply Current
during Programming Pulse
V
CC
Supply Current
Temperature Ambient
Power Supply Voltage
Programming Supply Voltage
Input Rise Fall Time
Input Low Voltage
Input High Voltage
Input Timing Reference Voltage
Output Timing Reference Voltage
2 3 4 and 5)
Conditions
Min
1
1
1
1
1
0
1
CE
e
V
IL
0
95
CE
e
V
IL
CE
e
V
IL
100
60
105
100
30
50
20
60
12 5
5
00
24
08
08
40
20
20
0 45
25
6 25
12 75
30
65
13 0
Typ
Max
Units
ms
ms
ms
ms
ms
ms
ms
ns
ms
ns
mA
mA
C
V
V
ns
V
V
V
V
Programming Waveforms
(Note 3)
TL D 10833 – 5
Note 1
National’s standard product warranty applies to devices programmed to specifications described herein
Note 2
V
CC
must be applied simultaneously or before V
PP
and removed simultaneously or after V
PP
The EPROM must not be inserted into or removed from a
board with voltage applied to V
PP
or V
CC
Note 3
The maximum absolute allowable voltage which may be applied to the V
PP
pin during programming is 14V Care must be taken when switching the V
PP
supply to prevent any overshoot from exceeding this 14V maximum specification At least a 0 1
mF
capacitor is required across V
PP
V
CC
to GND to suppress
spurious voltage transients which may damage the device
Note 4
Programming and program verify are tested with the Fast Program Algorithm at typical power supply voltages and timings
Note 5
During power up the PGM pin must be brought high (
t
V
IH
) either coincident with or before power is applied to V
PP
5