Military Version
ECL-to-TTL AC Electrical Characteristics
=
=
=
=
=
VEE −4.2V to −5.7V, VTTL +4.5V to +5.5V, VCC VCCA GND, CL 50 pF
=
=
=
Symbol
Parameter
TC −55˚C
TC 25˚C
TC +125˚C
Units
ns
Conditions
Figures 1, 2
Figures 3, 4
Figures 3, 5
Figures 3, 6
Notes
Min
Max
Min
Max
Min
Max
tPLH
tPHL
tPZH
tPZL
tPHZ
tPLZ
tPHZ
tPLZ
tset
CP to Tn
3.1
8.0
3.1
7.3
3.3
8.0
(Notes 11, 12,
13)
OE to Tn
3.4
3.7
3.2
3.0
2.6
2.7
2.5
3.0
2.5
200
9.1
9.5
10.0
9.8
9.5
8.7
3.7
4.0
3.3
3.4
2.8
3.1
2.0
2.5
2.5
200
9.0
9.3
9.0
8.8
8.8
8.0
4.0
4.3
3.5
4.1
3.0
4.0
2.5
3.0
5.0
100
10.1
10.4
9.3
ns
(Notes 11, 12,
13)
(Enable Time)
OE to Tn
ns
(Disable Time)
DIR to Tn
10.4
9.0
ns
(Disable Time)
En to CP
9.6
ns
ns
Figures 3, 4
Figures 3, 4
Figures 3, 4
(Note 14)
(Note 14)
thold
tpw(H)
fMAX
En to CP
Pulse Width CP
CP
ns
MHz
Note 11: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immedi-
ately after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures.
Note 12: Screen tested 100% on each device at +25˚C, temperature only, Subgroup A9.
Note 13: Sample tested (Method 5005, Table I) on each mfg. lot at +25˚C, Subgroup A9, and at +125˚C and −55˚C temperatures, Subgroups A10 and A11.
Note 14: Not tested at +25˚C, +125˚C and −55˚C temperature (design characterization data).
www.national.com
6
NSC [ National Semiconductor ]
