Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Voltage Applied to Output
=
in HIGH State (with VCC 0V)
Current Applied to Output
in LOW State (Max)
−0.5V to VCC
twice the rated IOL (mA)
Above which the useful life may be impaired.
ESD (Note 2)
≥2000V
Storage Temperature (TSTG
)
−65˚C to +150˚C
Recommended Operating
Conditions
Case Temperature (TC)
Military
Maximum Junction Temperature (TJ)
Ceramic
+175˚C
−7.0V to +0.5V
−0.5V to +6.0V
VEE to +0.5V
VEE Pin Potential to Ground Pin
VTTL Pin Potential to Ground Pin
Input Voltage (DC)
−55˚C to +125˚C
−5.7V to −4.2V
Supply Voltage (VEE
)
Note 1: Absolute maximum ratings are those values beyond which the de-
vice may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.
Military Version
DC Electrical Characteristics
=
=
=
=
=
=
VEE −4.2V to −5.7V, VCC VCCA GND, TC −55˚C to +125˚C, CL 50 pF, VTTL +4.5V to +5.5V
Symbol
Parameter
Min
Max
Units
TC
Conditions
Notes
= =
IVBB −3 µA, VEE −4.2V
VBB
Output Reference Voltage
−1380 −1260
0˚C to +125˚C
(Notes 3,
4, 5)
=
=
VEE −5.7V
mV
IVBB −2.1 mA
=
IVBB −3 mA
−1396 −1260
−55˚C
VIH
VIL
Input HIGH Voltage
Input LOW Voltage
Output HIGH Voltage
−1165
−870
mV
−55˚C to +125˚C Guaranteed HIGH Signal for All Inputs
(with One Input Tied to VBB
−55˚C to +125˚C Guaranteed LOW Signal for All Inputs
(with One Input Tied to VBB
(Notes 3,
4, 5, 6)
)
−1830 −1475
mV
(Notes 3,
4, 5, 6)
)
=
=
VOH
2.5
2.4
0.5
150
mV
0˚C to +125˚C
−55˚C
IOH −2.0 mA
VIN VIH
(Max)
(Notes 3,
4, 5)
or VIL (Min)
=
−55˚C to +125˚C IOL 20 mA
VOL
Output LOW Voltage
mV
mV
VDIFF
Input Voltage Differential
−55˚C to +125˚C Required for Full Output Swing
−55˚C to +125˚C
(Notes 3,
4, 5)
VCM
Common Mode Voltage
Input HIGH Current
Input LOW Current
−2000
−500
mV
µA
(Notes 3,
4, 5, 6)
= =
VIN VIH (Max), D0–D5 VBB ,
IIH
350
500
0˚C to +125˚C
−55˚C
(Notes 3,
4, 5)
=
D0–D5 VIL
(Min)
=
=
IIL
0.50
µA
−55˚C to +125˚C VIN VIL
D0–D5 VBB
(Notes 3,
4, 5)
(Min),
=
IOS
Output Short Circuit
Current
−150
−60
250
mA
−55˚C to +125˚C VOUT GND
(Notes 3,
4, 5)
Test One Output at a Time
=
−55˚C to +125˚C VOUT 5.5V
ICEX
Output HIGH
µA
(Notes 3,
4, 5)
Leakage Current
VEE Power Supply Current
=
IEE
−35
−12
65
mA
mA
−55˚C to +125˚C D0–D5 VBB
(Notes 3,
4, 5)
=
ITTL
VTTL Power Supply Current
−55˚C to +125˚C D0–D5 VBB
(Notes 3,
4, 5)
Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case
condition at cold temperatures.
Note 4: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8.
Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, + 25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.
Note 6: Guaranteed by applying specified input condition and testing V /V
.
OH OL
3
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