Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Above which the useful life may be impaired.
Storage Temperature (T
STG
)
Maximum Junction Temperature (T
J
)
Ceramic
V
EE
Pin Potential to Ground Pin
V
TTL
Pin Potential to Ground Pin
Input Voltage (DC)
−65˚C to +150˚C
+175˚C
−7.0V to +0.5V
−0.5V to +6.0V
V
EE
to +0.5V
Voltage Applied to Output
in HIGH State (with V
CC
= 0V)
Current Applied to Output
in LOW State (Max)
ESD (Note 2)
−0.5V to V
CC
twice the rated I
OL
(mA)
≥2000V
Recommended Operating
Conditions
Case Temperature (T
C
)
Military
Supply Voltage (V
EE
)
−55˚C to +125˚C
−5.7V to −4.2V
Note 1:
Absolute maximum ratings are those values beyond which the de-
vice may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2:
ESD testing conforms to MIL-STD-883, Method 3015.
Military Version
DC Electrical Characteristics
V
EE
= −4.2V to −5.7V, V
CC
= V
CCA
= GND, T
C
= −55˚C to +125˚C, C
L
= 50 pF, V
TTL
= +4.5V to +5.5V
Symbol
V
BB
Parameter
Output Reference Voltage
Min
−1380
−1396
V
IH
V
IL
V
OH
V
OL
V
DIFF
V
CM
I
IH
I
IL
I
OS
I
CEX
I
EE
I
TTL
Input HIGH Voltage
Input LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input Voltage Differential
Common Mode Voltage
Input HIGH Current
Input LOW Current
Output Short Circuit
Current
Output HIGH
Leakage Current
V
EE
Power Supply Current
V
TTL
Power Supply Current
−35
−12
65
mA
mA
−55˚C to +125˚C
−55˚C to +125˚C
D
0
–D
5
= V
BB
D
0
–D
5
= V
BB
250
µA
−55˚C to +125˚C
0.50
−150
−60
150
−2000
−500
350
500
µA
mA
−1165
−1830
2.5
2.4
0.5
mV
mV
mV
µA
Max
−1260
mV
−1260
−870
−1475
mV
mV
mV
−55˚C
−55˚C to +125˚C
−55˚C to +125˚C
0˚C to +125˚C
−55˚C
−55˚C to +125˚C
−55˚C to +125˚C
−55˚C to +125˚C
0˚C to +125˚C
−55˚C
−55˚C to +125˚C
−55˚C to +125˚C
V
IN
= V
IH
V
IN
= V
IL
(Max)
,
Units
T
C
0˚C to +125˚C
I
VBB
= −2.1 mA
I
VBB
= −3 mA
Conditions
I
VBB
= −3 µA, V
EE
= −4.2V
V
EE
= −5.7V
Notes
(Notes 3,
4, 5)
(Notes 3,
4, 5, 6)
(Notes 3,
4, 5, 6)
(Notes 3,
4, 5)
(Notes 3,
4, 5)
(Notes 3,
4, 5, 6)
Guaranteed HIGH Signal for All Inputs
(with One Input Tied to V
BB
)
Guaranteed LOW Signal for All Inputs
(with One Input Tied to V
BB
)
I
OH
= −2.0 mA
I
OL
= 20 mA
Required for Full Output Swing
V
IN
= V
IH
(Max)
or V
IL (Min)
D
0
–D
5
= V
BB
,
D
0
–D
5
= V
IL
(Min)
(Notes 3,
4, 5)
(Notes 3,
4, 5)
(Notes 3,
4, 5)
(Notes 3,
4, 5)
(Notes 3,
4, 5)
(Notes 3,
4, 5)
(Min),
D
0
–D
5
= V
BB
V
OUT
= GND
Test One Output at a Time
V
OUT
= 5.5V
Note 3:
F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case
condition at cold temperatures.
Note 4:
Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8.
Note 5:
Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, + 25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.
Note 6:
Guaranteed by applying specified input condition and testing V
OH
/V
OL
.
3
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