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100322FM 参数 Datasheet PDF下载

100322FM图片预览
型号: 100322FM
PDF下载: 下载PDF文件 查看货源
内容描述: 九位缓冲器\n [Nine Bit Buffer ]
分类和应用: 栅极逻辑集成电路
文件页数/大小: 6 页 / 108 K
品牌: NSC [ National Semiconductor ]
 浏览型号100322FM的Datasheet PDF文件第1页浏览型号100322FM的Datasheet PDF文件第2页浏览型号100322FM的Datasheet PDF文件第4页浏览型号100322FM的Datasheet PDF文件第5页浏览型号100322FM的Datasheet PDF文件第6页  
Absolute Maximum Ratings (Note 1)  
ESD (Note 2)  
2000V  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales Office/  
Distributors for availability and specifications.  
Recommended Operating  
Conditions  
Case Temperature (TC)  
Military  
Above which the useful life may be impaired.  
Storage Temperature (TSTG  
)
−65˚C to +150˚C  
−55˚C to +125˚C  
−5.7V to −4.2V  
Maximum Junction Temperature (TJ)  
Ceramic  
Supply Voltage (VEE  
)
+175˚C  
−7.0V to +0.5V  
VEE to +0.5V  
−50 mA  
Note 1: Absolute maximum ratings are those values beyond which the de-  
vice may be damaged or have its useful life impaired. Functional operation  
under these conditions is not implied.  
VEE Pin Potential to Ground Pin  
Input Voltage (DC)  
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.  
Output Current (DC Output HIGH)  
Military Version  
DC Electrical Characteristics  
=
=
=
=
VEE −4.2V to −5.7V, VCC VCCA GND, TC −55˚C to +125˚C  
Symbol  
Parameter  
Min  
Max Units  
TC  
Conditions  
Notes  
VOH  
Output HIGH Voltage −1025 −870  
−1085 −870  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
0˚C to +125˚C  
−55˚C  
(Notes 3, 4, 5)  
=
VIN VIH (Max)  
Loading with  
VOL  
VOHC  
VOLC  
VIH  
VIL  
Output LOW Voltage −1830 −1620  
−1830 −1555  
0˚C to +125˚C  
−55˚C  
or VIL (Min)  
50to −2.0V  
Output HIGH Voltage −1035  
−1085  
0˚C to +125˚C  
−55˚C  
(Notes 3, 4, 5)  
=
VIN VIH (Max)  
Loading with  
Output LOW Voltage  
Input HIGH Voltage  
Input HIGH Voltage  
Input LOW Current  
Input HIGH Current  
−1610  
−1555  
0˚C to +125˚C  
−55˚C  
or VIL (Min)  
50to −2.0V  
−1165 −870  
−55˚C to +125˚C  
Guaranteed HIGH Signal  
for All Inputs  
(Notes 3, 4, 5,  
6)  
−1830 −1475  
0.50  
mV  
µA  
−55˚C to +125˚C  
−55˚C to +125˚  
Guaranteed LOW Signal  
for All Inputs  
(Notes 3, 4, 5,  
6)  
=
VEE −4.2V  
IIL  
(Notes 3, 4, 5)  
=
VIN VIL (Min)  
=
VEE −5.7V  
IIH  
240  
340  
µA  
µA  
0˚C to +125˚C  
−55˚C  
(Notes 3, 4, 5)  
(Notes 3, 4, 5)  
=
VIN VIH (Max)  
IEE  
Power Supply  
Current  
−70  
−25  
mA  
−55˚C to +125˚C  
Inputs Open  
Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately  
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case  
condition at cold temperatures.  
Note 4: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8.  
Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.  
Note 6: Guaranteed by applying specified input condition and testing V /V  
.
OH OL  
AC Electrical Characteristics  
=
=
=
VEE −4.2V to −5.7V, VCC VCCA GND  
=
=
=
Symbol  
Parameter  
TC −55˚C  
TC +25˚C  
TC +125˚C  
Units  
ns  
Conditions  
Notes  
Min  
Max  
Min  
Max  
Min  
Max  
tPLH  
tPHL  
tTLH  
tTHL  
Propagation Delay  
Data to Output  
0.30  
1.80  
0.40  
1.60  
0.40  
1.80  
(Notes 7, 8,  
9, 11)  
Figures 1, 2  
Transition Time  
0.30  
1.20  
0.30  
1.20  
0.30  
1.20  
ns  
(Note 10)  
20% to 80%, 80% to  
20%  
Note 7: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately  
after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures.  
Note 8: Screen tested 100% on each device at +25˚C, only Subgroup A9.  
Note 9: Sample tested (Method 5005, Table I) on each manufactured lot at +25˚C, Subgroup A9, and at +125˚C and −55˚C temperatures, Subgroups A10 and A11.  
3
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