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100304F 参数 Datasheet PDF下载

100304F图片预览
型号: 100304F
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗昆特与/与非门 [Low Power Quint AND/NAND Gate]
分类和应用:
文件页数/大小: 8 页 / 113 K
品牌: NSC [ National Semiconductor ]
 浏览型号100304F的Datasheet PDF文件第1页浏览型号100304F的Datasheet PDF文件第2页浏览型号100304F的Datasheet PDF文件第4页浏览型号100304F的Datasheet PDF文件第5页浏览型号100304F的Datasheet PDF文件第6页浏览型号100304F的Datasheet PDF文件第7页浏览型号100304F的Datasheet PDF文件第8页  
Absolute Maximum Ratings (Note 1)  
ESD (Note 2)  
2000V  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales Office/  
Distributors for availability and specifications.  
Recommended Operating  
Conditions  
Case Temperature (TC)  
Military  
Above which the useful life may be impaired  
Storage Temperature (TSTG  
)
−65˚C to +150˚C  
−55˚C to +125˚C  
−5.7V to −4.2V  
Maximum Junction Temperature (TJ)  
Ceramic  
Supply Voltage (VEE  
)
+175˚C  
−7.0V to +0.5V  
VEE to +0.5V  
−50 mA  
Note 1: Absolute maximum ratings are those values beyond which the de-  
vice may be damaged or have its useful life impaired. Functional operation  
under these conditions is not implied.  
VEE Pin Potential to Ground Pin  
Input Voltage (DC)  
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.  
Output Current (DC Output HIGH)  
Military Version  
DC Electrical Characteristics  
=
=
=
=
VEE −4.2V to −5.7V, VCC VCCA GND, TC −55˚C to +125˚C  
Symbol  
Parameter  
Min  
Max  
Units  
TC  
Conditions  
Notes  
VOH  
Output HIGH Voltage −1025 −870  
mV  
0˚C to  
+125˚C  
−55˚C  
0˚C to  
+125˚C  
−55˚C  
0˚C to  
+125˚C  
−55˚C  
0˚C to  
+125˚C  
−55˚C  
−55˚C  
+125˚C  
=
−1085 −870  
mV  
mV  
VIN VIH (Max)  
Loading with  
(Notes 3, 4, 5)  
VOL  
Output LOW Voltage  
−1830 −1620  
−1830 −1555  
or VIL (Min)  
500 to −2.0V  
mV  
mV  
VOHC  
Output HIGH Voltage −1035  
=
−1085  
mV  
mV  
VIN VIH (Min)  
Loading with  
(Notes 3, 4, 5)  
VOLC  
Output LOW Voltage  
−1610  
−1555  
or VIL (Max)  
50to −2.0V  
mV  
mV  
VIH  
VIL  
IIL  
Input HIGH Voltage  
Input LOW Voltage  
Input LOW Current  
Input High Current  
−1165 −870  
−1830 −1475  
0.50  
Guaranteed HIGH Signal  
for All Inputs  
(Notes 3, 4, 5, 6)  
(Notes 3, 4, 5, 6)  
(Notes 3, 4, 5)  
mV  
µA  
−55˚C to Guaranteed LOW Signal  
+125˚C for All Inputs  
−55˚C to VEE −4.2V  
=
=
VIN VIL (Min)  
+125˚C  
D
D
2a–D2e  
1a–D1e  
250  
350  
µA  
0˚C to  
=
+125˚C  
VEE −5.7V  
(Notes 3, 4, 5)  
(Notes 3, 4, 5)  
=
IIH  
VIN VIH (Max)  
D
D
2a–D2e  
1a–D1e  
350  
500  
µA  
−55˚C  
IEE  
Power Supply Current  
−75  
−25  
mA  
−55˚C to  
+125˚C  
Inputs Open  
Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately  
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case  
condition at cold temperatures.  
Note 4: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups, 1, 2 3, 7, and 8.  
Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.  
Note 6: Guaranteed by applying specified input condition and testing V /V  
.
OH OL  
3
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