5075 series
ELECTRICAL CHARACTERISTICS
5075
×
1 to 5075
×
5
V
DD
= 2.25 to 3.63V, V
C
= 0.5V
DD
, V
SS
= 0V, Ta = –40 to +85
°
C unless otherwise noted.
Rating
Parameter
Symbol
Conditions
Min
5075
×
1 (f
O
), Measurement circuit 1,
no load, f
O
= 27MHz, f
OUT
= 27MHz
5075×2 (f
O
/2), Measurement circuit 1,
no load, f
O
= 27MHz, f
OUT
= 13.5MHz
5075×3 (f
O
/4), Measurement circuit 1,
no load, f
O
= 27MHz, f
OUT
= 6.75MHz
5075×4 (f
O
/8), Measurement circuit 1,
no load, f
O
= 27MHz, f
OUT
= 3.38MHz
5075×5 (f
O
/16), Measurement circuit 1,
no load, f
O
= 27MHz, f
OUT
= 1.69MHz
HIGH-level output voltage
LOW-level output voltage
Oscillator block built-in
resistance
V
OH
V
OL
R
VC1
R
VC2
V
C
= 0.3V
C
VC1
Oscillator block built-in
capacitance
C
VC2
Design value (a monitor pattern on a
wafer is tested), Excluding parasitic
capacitance.
V
C
= 1.65V
V
C
= 3.0V
V
C
= 0.3V
V
C
= 1.65V
V
C
= 3.0V
VC input resistance
VC input impedance
VC input capacitance
Modulation
characteristics
*1
R
VIN
Z
VIN
C
VIN
fm
Measurement circuit 4, Ta = 25°C
Measurement circuit 5, V
C
= 0V, f = 10kHz, Ta = 25°C
(a monitor pattern on a wafer is tested)
Measurement circuit 5, V
C
= 0V, f = 10kHz, Ta = 25°C
(a monitor pattern on a wafer is tested)
Measurement circuit 6, –3dB frequency, V
DD
= 3.3V,
V
C
= 3.3Vp-p, Ta = 25°C, f
O
= 27MHz
V
DD
= 2.5V
V
DD
= 3.3V
V
DD
= 2.5V
V
DD
= 3.3V
V
DD
= 2.5V
V
DD
= 3.3V
V
DD
= 2.5V
V
DD
= 3.3V
V
DD
= 2.5V
V
DD
= 3.3V
–
–
–
–
–
–
–
–
–
–
V
DD
– 0.4
–
210
Measurement circuit 3
210
–
–
–
–
–
–
10
–
–
–
420
5.6
3.1
1.5
8.4
4.7
2.3
–
450
37
25
840
–
–
–
–
–
–
–
–
–
–
kΩ
pF
pF
pF
pF
pF
pF
MΩ
kΩ
pF
kHz
Typ
0.7
1.0
0.6
0.8
0.5
0.7
0.5
0.6
0.4
0.6
–
–
420
Max
1.4
2.0
1.2
1.6
1.0
1.4
1.0
1.2
0.8
1.2
–
0.4
840
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
kΩ
Unit
Current consumption
I
DD
Q pin, Measurement circuit 2, I
OH
= –2.8mA
Q pin, Measurement circuit 2, I
OL
= 2.8mA
*1. The modulation characteristics may vary with the crystal used.
SEIKO NPC CORPORATION —5
NPC [ NIPPON PRECISION CIRCUITS INC ]
