CF5073 series
CF5073B×
V
= 3.0 to 3.6V, V = 1.65V, V = 0V, Ta = –40 to +85°C, unless otherwise noted.
C SS
DD
Rating
Typ
2.75
0.2
–
Parameter
Symbol
Conditions
Unit
Min
2.5
–
Max
–
HIGH-level output voltage
LOW-level output voltage
V
Q: Measurement circuit 1, I = 6mA
OH
V
OH
V
Q: Measurement circuit 1, I = 6mA
OL
0.4
10
10
–
V
OL
V
= V
= V
–
ꢀA
ꢀA
V
OH
OL
DD
Q: Measurement circuit 6,
INHN = LOW
Output leakage current
I
Z
V
–
–
SS
HIGH-level input voltage
LOW-level input voltage
V
INHN
INHN
0.7V
–
IH
DD
V
–
–
–
0.3V
V
IL
DD
CF5073B1
9
22
mA
mA
mA
mA
kΩ
kΩ
kΩ
kΩ
Measurement circuit 2,
load circuit 1,
INHN = open, C = 15pF,
CF5073B2
–
8
21
Current consumption
I
DD
L
CF5073B3
–
7.5
7.5
100
300
0.72
200
20.5
20.5
180
540
0.94
360
f = 23MHz
CF5073B4 to 6
–
INHN pull-up resistance
R
Measurement circuit 3
50
150
0.50
100
UP
R
f
Design value, determined by internal wafer
pattern
R
D
Built-in resistance
R
Measurement circuit 4
B1
Design value, determined by internal wafer
pattern
R
50
100
180
kΩ
B2
V
V
= 0.3V
= 3.0V
11.0
2.3
14.6
4.0
30
18.2
5.7
pF
pF
pF
pF
pF
C
C
Design value, determined
by internal wafer pattern
C
V
Built-in capacitance
C
25.5
34
34.5
46
G
Design value, determined by internal wafer
pattern
C
40
D
C
12.7
15
17.3
C
NIPPON PRECISION CIRCUITS INC.—6
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