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CF5027C5-4 参数 Datasheet PDF下载

CF5027C5-4图片预览
型号: CF5027C5-4
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体振荡器模块集成电路 [Crystal Oscillator Module ICs]
分类和应用: 振荡器晶体振荡器
文件页数/大小: 21 页 / 814 K
品牌: NPC [ NIPPON PRECISION CIRCUITS INC ]
 浏览型号CF5027C5-4的Datasheet PDF文件第7页浏览型号CF5027C5-4的Datasheet PDF文件第8页浏览型号CF5027C5-4的Datasheet PDF文件第9页浏览型号CF5027C5-4的Datasheet PDF文件第10页浏览型号CF5027C5-4的Datasheet PDF文件第12页浏览型号CF5027C5-4的Datasheet PDF文件第13页浏览型号CF5027C5-4的Datasheet PDF文件第14页浏览型号CF5027C5-4的Datasheet PDF文件第15页  
WF5027 series  
For 3rd Overtone Oscillator (5027×A to 5027×D)  
= 1.60 to 3.63V, V = 0V, Ta = 40 to +85°C unless otherwise noted.  
V
DD  
SS  
Rating  
typ  
Parameter  
Symbol  
Condition  
Unit  
min  
max  
Q: Measurement cct 3, I = – 8mA,  
OH  
V
V
– 0.4  
V
V
V
V
DD  
DD  
V
= 2.25 to 3.63V  
DD  
HIGH-level output voltage  
LOW-level output voltage  
V
OH  
Q: Measurement cct 3, I = – 4mA,  
OH  
– 0.4  
V
= 1.60 to 2.25V  
DD  
Q: Measurement cct 3, I = 8mA,  
OL  
0.4  
V
= 2.25 to 3.63V  
DD  
V
OL  
Q: Measurement cct 3, I = 4mA,  
OL  
0.4  
V
= 1.60 to 2.25V  
DD  
HIGH-level input voltage  
LOW-level input voltage  
V
INHN, Measurement cct 4  
INHN, Measurement cct 4  
0.7V  
V
IH  
DD  
V
0.3V  
V
IL  
DD  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
= V  
= V  
10  
ꢀA  
OH  
OL  
DD  
DD  
DD  
DD  
DD  
DD  
DD  
DD  
DD  
DD  
DD  
DD  
DD  
Q: Measurement cct 5,  
INHN = LOW  
Output leakage current  
I
Z
– 10  
ꢀA  
SS  
= 3.3V  
3.6  
3.0  
2.6  
3.8  
3.2  
2.8  
4.8  
4.0  
3.4  
5.3  
4.4  
3.6  
5.4  
4.5  
3.9  
5.7  
4.8  
4.2  
7.2  
6.0  
5.1  
8.0  
6.6  
5.4  
10  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
ꢀA  
5027×A, Measurement cct 1,  
= 2.5V  
= 1.8V  
= 3.3V  
= 2.5V  
= 1.8V  
= 3.3V  
= 2.5V  
= 1.8V  
= 3.3V  
= 2.5V  
= 1.8V  
no load, INHN = open, f = 48MHz  
O
5027×B, Measurement cct 1,  
no load, INHN = open, f = 54MHz  
O
*1  
Current consumption  
I
DD  
5027×C, Measurement cct 1,  
no load, INHN = open, f = 85MHz  
O
5027×D, Measurement cct 1,  
no load, INHN = open, f = 100MHz  
O
Standby current  
I
Measurement cct 1, INHN = LOW  
Measurement cct 6  
ST  
R
0.4  
30  
1.5  
70  
3.8  
3.2  
2.8  
2.8  
12  
8
8
MΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
pF  
UP1  
INHN pull-up resistance  
R
150  
5.0  
4.2  
3.7  
3.7  
14.4  
9.6  
7.2  
2.4  
14.4  
14.4  
9.6  
7.2  
UP2  
5027×A  
5027×B  
5027×C  
5027×D  
2.6  
2.2  
1.9  
1.9  
9.6  
6.4  
4.8  
1.6  
9.6  
9.6  
6.4  
4.8  
Oscillator feedback  
resistance  
R
f
5027×A  
5027×B  
5027×C  
5027×D  
5027×A  
5027×B  
5027×C  
5027×D  
Design value (a monitor pattern on a  
wafer is tested),  
Excluding parasitic capacitance.  
pF  
C
G
6
pF  
2
pF  
Oscillator capacitance  
12  
12  
8
pF  
Design value (a monitor pattern on a  
wafer is tested),  
Excluding parasitic capacitance.  
pF  
C
D
pF  
6
pF  
*1. The consumption current I (C ) with a load capacitance (C ) connected to the Q pin is given by the following equation, where I is the no-load con-  
L
DD  
L
is the output frequency.  
DD  
sumption current and f  
I
OUT  
–3  
(C ) [mA] = I [mA] + C [pF] × V [V] × f [MHz] × 10  
OUT  
DD  
L
DD  
L
DD  
SEIKO NPC CORPORATION —11