SM5022 s eries
PAD LAYOUT
PINOUT
(Unit : µm)
(Top View)
Q
XT
(1000,800)
VDD
1
2
3
6
5
4
INH
XT
XT
VDD
Q
VSS
(0,0)
VSS
XT INH
Chip size: 1.00
Chip thickness: 220 ± 30 µm
Chip base: V level
× 0.80 mm
DD
PIN DESCRIPTION and PAD DIMENSIONS
Pad dimens ions [µm]
Nu mb e r
Na me
I/O
Des cription
X
Y
1
2
INH
XT
I
I
Output state control input. High impedance when LOW. Pull-up resistor built in
834
217
Crystal oscillator connection pins.
Amplifier input.
637
217
Crystal oscillator connected between XT and XT
3
4
5
VS S
Q
–
O
–
Ground
165
162
859
165
637
450
Output. Output frequency (f , f /2, f /4, f /8) determined by internal connection
O
O
O
O
VDD
Supply voltage
Crystal oscillator connection pins.
Crystal oscillator connected between XT and XT
6
XT
O
Amplifier output.
804
604
BLOCK DIAGRAM
VDD VSS
XT
CG
CD
Rf
XT
1/2
1/2
1/2
Q
INH
(INH : Low active)
NIPPON PRECISION CIRCUITS—3