SM5021 series
Electrical Characteristics
3V operation: AA, AB, AC, AD, AE, KD, KE series
V
DD
= 2.7 to 3.6V, V
SS
= 0V, Ta =
−
20 to + 80
°
C unless otherwise noted.
Parameter
Symbol
Condition
SM5021
×
AH, CF5021
×
A
SM5021
×
BH, CF5021
×
B
SM5021
×
CH, CF5021
×
C
SM5021
×
DH, CF5021
×
D
SM5021
×
EH, CF5021
×
E
SM5021
×
AH, CF5021
×
A
SM5021
×
BH, CF5021
×
B
SM5021
×
CH, CF5021
×
C
SM5021
×
DH, CF5021
×
D
SM5021
×
EH, CF5021
×
E
2.0
–
–
–
–
25
SM5021×AH, CF5021×A
Feedback resistance
(A
×
series only)
SM5021×BH, CF5021×B
R
f
Measurement cct 5
SM5021×CH, CF5021×C
SM5021×DH, CF5021×D
SM5021×EH, CF5021×E
C
G
Built-in capacitance
Design value. A monitor pattern on a wafer is tested.
SM5021×AH, CF5021×A
SM5021×BH, CF5021×B
SM5021×CH, CF5021×C
SM5021×DH, CF5021×D
SM5021×EH, CF5021×E
5.1
2.8
3.3
2.3
7.44
–
–
–
–
13
100
6.0
3.3
3.9
2.7
8
–
0.5
10
10
25
250
6.9
3.8
4.5
3.1
8.56
pF
kΩ
V
V
µA
Rating
min
typ
max
Unit
HIGH-level output voltage
V
OH
Q: Measurement cct 1, V
DD
= 2.7V,
I
OH
= 4mA
Q: Measurement cct 1, V
DD
= 2.7V,
I
OH
= 8mA
Q: Measurement cct 2, V
DD
= 2.7V,
I
OL
= 4mA
Q: Measurement cct 2, V
DD
= 2.7V,
I
OL
= 8mA
2.1
2.4
–
V
LOW-level output voltage
V
OL
–
0.3
0.4
V
HIGH-level input voltage
LOW-level input voltage
Output leakage current
V
IH
V
IL
I
Z
INHN
INHN
Q: Measurement cct 2, V
DD
= 3.3V, INHN = LOW, V
OH
= V
DD
Q: Measurement cct 2, V
DD
= 3.3V, INHN = LOW, V
OL
= V
SS
70MHz crystal oscillator,
measurement cct 3, load cct 1,
INHN = open, C
L
= 15pF
Measurement cct 4
SM5021A×H, CF5021A×
SM5021K×H, CF5021K×
Current consumption
INHN pull-up resistance
I
DD
R
UP
mA
k
Ω
C
D
Design value. A monitor pattern on a
wafer is tested.
13.95
15
16.05
pF
11.16
12
12.84
SEIKO NPC CORPORATION —5
NPC [ NIPPON PRECISION CIRCUITS INC ]
