SM5010 series
MEASUREMENT CIRCUITS
Measurement cct 1
Measurement cct 4
VDD
VDD
C1
VDD
IPR
Signal
Generator
RUP1 =
RUP2 =
(VIL = 0V)
XT
Q
R2
R1
VSS
VSS
INHN
VDD VIH
IPR
(VIH = 0.7VDD)
V
VIH
VIL
VOH
0V
Q output
IPR
A
2.0V
3.5V
C1 : 0.001µF
R1 : 50Ω
, 10MHz sine wave input signal (3V operation)
, 10MHz sine wave input signal (5V operation)
P−P
P−P
R2 : 5010AN×, BN×, DN×, AK×, BK×
3V operation: 263Ω
5V operation: 245Ω
5010FN×, HN×, HK×
3V operation: 275Ω
5V operation: 245Ω
5010CL×
Measurement cct 5
VDD
XT
3V operation: 275Ω
5V operation: 250Ω
5010EA×, AH×, BH×
3V operation: 1050Ω
5010EA×, AH×, BH×, FH×
5V operation: 975Ω
VDD
Rf =
IRf
XTN
VSS
A
IRf
Measurement cct 2
Measurement cct 6
IZ, IOL
IZ
VDD
IST
A
Q
A
CG
VDD
XT
INHN VSS
VOL
Rfo
X'tal
Q
V
XTN
INHN VSS
CD
Measurement cct 3
Crystal oscillation
C , C : 22pF (5010DN×)
G
D
R : 3.0kΩ (5010H××)
fo
IDD
A
Measurement cct 7
VDD
C1
Signal
Generator
XT
Q
VDD
R1
Signal
Generator
VSS
XT
Q
VSS INHN
R1
2.0V
3.5V
, 30MHz sine wave input signal (3V operation)
, 30MHz sine wave input signal (5V operation)
P−P
P−P
C1 : 0.001µF
R1 : 50Ω
R1 : 50Ω
SEIKO NPC CORPORATION —22