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CF5010BH4 参数 Datasheet PDF下载

CF5010BH4图片预览
型号: CF5010BH4
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体振荡器模块集成电路 [Crystal Oscillator Module ICs]
分类和应用: 振荡器晶体振荡器
文件页数/大小: 25 页 / 167 K
品牌: NPC [ NIPPON PRECISION CIRCUITS INC ]
 浏览型号CF5010BH4的Datasheet PDF文件第5页浏览型号CF5010BH4的Datasheet PDF文件第6页浏览型号CF5010BH4的Datasheet PDF文件第7页浏览型号CF5010BH4的Datasheet PDF文件第8页浏览型号CF5010BH4的Datasheet PDF文件第10页浏览型号CF5010BH4的Datasheet PDF文件第11页浏览型号CF5010BH4的Datasheet PDF文件第12页浏览型号CF5010BH4的Datasheet PDF文件第13页  
SM5010 series
5010AH×, BH× series
3V operation: V
DD
= 2.7 to 3.6V, V
SS
= 0V, Ta =
−10
to +70°C unless otherwise noted.
Rating
Parameter
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Symbol
V
OH
V
OL
V
IH
V
IL
I
Z
Condition
min
Q: Measurement cct 1, V
DD
= 2.7V, I
OH
= 2mA
Q: Measurement cct 2, V
DD
= 2.7V, I
OL
= 2mA
INHN
INHN
Q: Measurement cct 2, INHN = LOW,
V
DD
= 3.6V
V
OH
= V
DD
V
OL
= V
SS
5010×H1
Current consumption
I
DD
Measurement cct 3, load cct 1,
INHN = open, C
L
= 15pF, f = 16MHz
5010×H2
5010×H3
5010×H4
INHN pull-up resistance
Feedback resistance
Oscillator amplifier output
resistance
R
UP2
R
f
R
D
C
G
Built-in capacitance
C
D
Design value. A monitor pattern on a
wafer is tested.
Measurement cct 4
Measurement cct 5
Design value
5010B××
5010A××
5010B××
5010A××
5010B××
2.1
2.0
40
80
690
26
20
26
20
typ
2.4
0.3
3
2
1.5
1.5
100
200
820
29
22
29
22
max
0.5
0.5
10
µA
10
6
4
mA
3
2.5
250
500
940
32
24
pF
32
24
kΩ
kΩ
V
V
V
V
Unit
5V operation: V
DD
= 4.5 to 5.5V, V
SS
= 0V, Ta =
−40
to +85°C unless otherwise noted.
Rating
Parameter
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Symbol
V
OH
V
OL
V
IH
V
IL
I
Z
Condition
min
Q: Measurement cct 1, V
DD
= 4.5V, I
OH
= 4mA
Q: Measurement cct 2, V
DD
= 4.5V, I
OL
= 4mA
INHN
INHN
Q: Measurement cct 2, INHN = LOW,
V
DD
= 5.5V
V
OH
= V
DD
V
OL
= V
SS
5010×H1
Current consumption
I
DD
Measurement cct 3, load cct 1,
INHN = open, C
L
= 15pF, f = 30MHz
5010×H2
5010×H3
5010×H4
INHN pull-up resistance
Feedback resistance
Oscillator amplifier output
resistance
R
UP2
R
f
R
D
C
G
Built-in capacitance
C
D
Design value. A monitor pattern on a
wafer is tested.
Measurement cct 4
Measurement cct 5
Design value
5010B××
5010A××
5010B××
5010A××
5010B××
3.9
2.0
40
80
690
26
20
26
20
typ
4.2
0.3
9
6
5
4
100
200
820
29
22
29
22
max
0.5
0.8
10
µA
10
18
12
mA
10
8
250
500
940
32
24
pF
32
24
kΩ
kΩ
V
V
V
V
Unit
SEIKO NPC CORPORATION —9