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CF5010BN3-1 参数 Datasheet PDF下载

CF5010BN3-1图片预览
型号: CF5010BN3-1
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体振荡器模块集成电路 [Crystal Oscillator Module ICs]
分类和应用: 振荡器晶体振荡器
文件页数/大小: 25 页 / 167 K
品牌: NPC [ NIPPON PRECISION CIRCUITS INC ]
 浏览型号CF5010BN3-1的Datasheet PDF文件第6页浏览型号CF5010BN3-1的Datasheet PDF文件第7页浏览型号CF5010BN3-1的Datasheet PDF文件第8页浏览型号CF5010BN3-1的Datasheet PDF文件第9页浏览型号CF5010BN3-1的Datasheet PDF文件第11页浏览型号CF5010BN3-1的Datasheet PDF文件第12页浏览型号CF5010BN3-1的Datasheet PDF文件第13页浏览型号CF5010BN3-1的Datasheet PDF文件第14页  
SM5010 series  
5010CL× series  
3V operation: V = 2.7 to 3.6V, V = 0V, Ta = 20 to +80°C unless otherwise noted.  
DD  
SS  
Rating  
typ  
2.4  
0.3  
Parameter  
Symbol  
Condition  
Unit  
min  
2.2  
max  
HIGH-level output voltage  
LOW-level output voltage  
HIGH-level input voltage  
LOW-level input voltage  
V
Q: Measurement cct 1, V = 2.7V, I = 8mA  
DD OH  
V
V
V
V
OH  
V
Q: Measurement cct 2, V = 2.7V, I = 8mA  
DD OL  
0.4  
OL  
V
INHN  
INHN  
0.7V  
IH  
DD  
V
0.3V  
DD  
IL  
V
V
= V  
= V  
10  
10  
10  
7
OH  
DD  
Q: Measurement cct 2, INHN = LOW,  
= 3.6V  
Output leakage current  
I
ꢀA  
Z
V
DD  
OL  
SS  
5010CL1  
5010CL2  
5010CL3  
5010CL4  
5010CL5  
5
3.5  
2.5  
2
Measurement cct 3, load cct 1,  
INHN = open, C = 15pF, f = 30MHz  
Current consumption  
I
5
mA  
DD  
L
4
2
4
Standby current  
I
Measurement cct 6, INHN = LOW  
Measurement cct 4  
5
ꢀA  
MΩ  
kΩ  
kΩ  
ST  
R
2
4
15  
250  
500  
20  
20  
UP1  
INHN pull-up resistance  
Feedback resistance  
Built-in capacitance  
R
40  
80  
16  
16  
100  
200  
18  
18  
UP2  
R
Measurement cct 5  
f
C
G
Design value. A monitor pattern on a wafer is tested.  
pF  
C
D
5V operation: V = 4.5 to 5.5V, V = 0V, Ta = 40 to +85°C unless otherwise noted.  
DD  
SS  
Rating  
typ  
4.2  
0.3  
Parameter  
Symbol  
Condition  
Unit  
min  
4.0  
max  
HIGH-level output voltage  
LOW-level output voltage  
HIGH-level input voltage  
LOW-level input voltage  
V
Q: Measurement cct 1, V = 4.5V, I = 16mA  
DD OH  
V
V
V
V
OH  
V
Q: Measurement cct 2, V = 4.5V, I = 16mA  
DD OL  
0.4  
OL  
V
INHN  
INHN  
0.7V  
IH  
DD  
V
0.3V  
DD  
IL  
V
V
= V  
= V  
10  
10  
30  
18  
12  
10  
10  
10  
8
OH  
DD  
Q: Measurement cct 2, INHN = LOW,  
= 5.5V  
Output leakage current  
I
ꢀA  
Z
V
DD  
OL  
SS  
5010CL1  
5010CL2  
5010CL3  
5010CL4  
5010CL5  
15  
9
Measurement cct 3, load cct 1,  
INHN = open, C = 50pF, f = 30MHz  
Current consumption  
I
6
mA  
DD  
L
5
5
Standby current  
I
Measurement cct 6, INHN = LOW  
Measurement cct 4  
ꢀA  
MΩ  
kΩ  
kΩ  
ST  
R
1
2
UP1  
INHN pull-up resistance  
Feedback resistance  
Built-in capacitance  
R
40  
80  
16  
16  
100  
200  
18  
18  
250  
500  
20  
20  
UP2  
R
Measurement cct 5  
f
C
G
Design value. A monitor pattern on a wafer is tested.  
pF  
C
D
SEIKO NPC CORPORATION —10  
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