SM5010 series
5010EA× series
3V operation: V = 2.7 to 3.6V, V = 0V, Ta = −10 to +70°C unless otherwise noted.
DD
SS
Rating
typ
2.4
0.3
–
Parameter
Symbol
Condition
Unit
min
2.1
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 2.7V, I = 2mA
DD OH
V
V
V
V
OH
V
Q: Measurement cct 2, V = 2.7V, I = 2mA
DD OL
0.5
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.5
8
IL
5010EA1
5010EA2
–
4
Measurement cct 3, load cct 1,
INHN = open, C = 15pF, f = 30MHz
Current consumption
I
mA
DD
L
–
2.5
100
200
5
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
40
80
250
500
kΩ
kΩ
UP2
R
f
Oscillator amplifier output
resistance
R
Design value
690
820
940
Ω
D
C
9
10
15
11
17
G
Built-in capacitance
Design value. A monitor pattern on a wafer is tested.
pF
C
13
D
5V operation: V = 4.5 to 5.5V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
DD
SS
Rating
typ
4.2
0.3
–
Parameter
Symbol
Condition
Unit
min
3.9
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 4.5V, I = 3.2mA
DD OH
V
V
V
V
OH
V
Q: Measurement cct 2, V = 4.5V, I = 3.2mA
DD OL
0.4
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.8
12
IL
5010EA1
5010EA2
5010EA1
5010EA2
–
6
Measurement cct 3, load cct 1,
INHN = open, C = 15pF, f = 30MHz
I
DD1
L
–
5
10
Current consumption
mA
–
9
18
Measurement cct 3, load cct 1,
INHN = open, C = 15pF, f = 40MHz
I
DD2
L
–
6
12
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
40
80
100
200
250
500
kΩ
kΩ
UP2
R
f
Oscillator amplifier output
resistance
R
Design value
690
820
940
Ω
D
C
9
10
15
11
17
G
Built-in capacitance
Design value. A monitor pattern on a wafer is tested.
pF
C
13
D
SEIKO NPC CORPORATION —11
NPC [ NIPPON PRECISION CIRCUITS INC ]
