SM5009 series
5009AH× series
3V operation: V = 2.7 to 3.3V, V = 0V, Ta = −20 to 80°C unless otherwise noted.
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
2.2
–
typ
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, I = 2mA
OH
V
V
V
V
OH
V
Q: Measurement cct 1, I = 2mA
OL
–
0.4
–
OL
V
INH
INH
2.0
–
–
IH
V
–
0.3
10
10
IL
Q: Measurement cct 2, INH = LOW, V = V
OH
–
–
DD
Output leakage current
I
ꢀA
Z
Q: Measurement cct 2, INH = LOW, V = V
OL
–
–
SS
SM5009AH1S
CF5009AH1
–
–
4.5
3
10
7
SM5009AH2S
CF5009AH2
INH = open, Measurement cct 3,
load cct 2, C = 15pF,
Current consumption
I
mA
DD
L
16MHz crystal oscillator
SM5009AH3S
CF5009AH3
SM5009AH4S
CF5009AH4
–
1.5
3.5
INH pull-up resistance
Negative resistance
Feedback resistance
R
Measurement cct 4, V = 3V, INH = V
DD SS
40
–
–
–450
–
200
–
kΩ
Ω
UP
−R
V
= 3V, Ta = 25°C, 16MHz
DD
L
R
Measurement cct 5
0.4
5.58
9.3
1.1
MΩ
pF
f
C
6
6.42
10.7
G
Built-in capacitance
Design value. A monitor pattern on a wafer is tested.
C
10
pF
D
5V operation: V = 4.5 to 5.5V, V = 0V, Ta = −40 to 85°C unless otherwise noted.
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
4.0
–
typ
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, I = 4mA
OH
V
V
V
V
OH
V
Q: Measurement cct 1, I = 4mA
OL
–
0.4
–
OL
V
INH
INH
2.0
–
–
IH
V
–
0.8
10
10
IL
Q: Measurement cct 2, INH = LOW, V = V
OH
–
–
DD
Output leakage current
I
ꢀA
Z
Q: Measurement cct 2, INH = LOW, V = V
OL
–
–
SS
SM5009AH1S
CF5009AH1
–
–
9
6
20
13
SM5009AH2S
CF5009AH2
INH = open, Measurement cct 3,
load cct 2, C = 15pF,
Current consumption
I
mA
DD
L
30MHz crystal oscillator
SM5009AH3S
CF5009AH3
SM5009AH4S
CF5009AH4
–
4
9
INH pull-up resistance
Negative resistance
Feedback resistance
R
Measurement cct 4, V = 5V, INH = V
DD SS
40
–
–
–340
–
200
–
kΩ
Ω
UP
−R
V
= 5V, Ta = 25°C, 30MHz
DD
L
R
Measurement cct 5
0.4
5.58
9.3
1.1
MΩ
pF
f
C
6
6.42
10.7
G
Built-in capacitance
Design value. A monitor pattern on a wafer is tested.
C
10
pF
D
NIPPON PRECISION CIRCUITS INC.—11