SM5006 series
Electrical Characteristics
5006×N series
3V operation: V
DD
= 2.7 to 3.6 V, V
SS
= 0 V, Ta =
−20
to 80
°C
unless otherwise noted.
Rating
Parameter
HIGH-level output voltage
LOW-level output voltage
Output leakage current
HIGH-level input voltage
LOW-level input voltage
Symbol
V
OH
V
OL
I
Z
V
IH
V
IL
Condition
min
Q: Measurement cct 1, V
DD
= 2.7V, I
OH
= 8mA
Q: Measurement cct 2, V
DD
= 2.7V, I
OL
= 8mA
Q: Measurement cct 2, INHN = LOW,
V
DD
= 5.5V
INHN
INHN
SM5006ANCS
CF5006ANC
SM5006BNCS
CF5006BNC
SM5006CNCS
CF5006CNC
SM5006ANDS
CF5006AND
SM5006BNES
CF5006BNE
SM5006CNES
CF5006CNE
SM5006DNES
CF5006DNE
SM5006CNDS
CF5006CND
SM5006DNCS
CF5006DNC
SM5006ANES
CF5006ANE
SM5006ANFS
CF5006ANF
V
OH
= V
DD
V
OL
= V
SS
2.2
–
–
–
2.0
–
typ
2.4
0.3
–
–
–
–
max
–
0.4
10
µA
10
–
0.5
V
V
V
V
Unit
f = 30MHz
–
8
16
f = 30MHz,
Ta = –10 to 70°C
f = 50MHz
INHN = open,
Measurement cct 3,
load cct 1,
V
DD
= 3.0 to 3.6V,
C
L
= 15pF
–
–
8
13
16
26
Current consumption
I
DD
f = 70MHz
–
15
30
mA
f = 40MHz,
Ta = –10 to 70°C
–
11
22
f = 70MHz
–
20
40
INHN pull-up resistance
R
UP
Measurement cct 4
SM5006ANAS, CF5006ANA
SM5006ANBS, CF5006ANB
SM5006ANCS, CF5006ANC
SM5006CNCS, CF5006CNC
SM5006ANDS, CF5006AND
SM5006ANES, CF5006ANE
SM5006ANFS, CF5006ANF
SM5006CNDS, CF5006CND
SM5006CNES, CF5006CNE
50
6.97
4.76
4.16
–
8.2
5.6
4.9
150
9.43
6.44
5.64
kΩ
Feedback resistance
R
f
Measurement cct 5
kΩ
2.21
2.6
2.99
Built-in resistance
R
G
R
D
Design value, determined by the R
f
value
Design value, determined by the R
f
value
Design value. A monitor pattern on a wafer is tested.
Design value. A monitor pattern on a wafer is tested.
17
17
7.44
14.88
20
20
8
16
23
23
8.56
Ω
Built-in capacitance
C
G
C
D
pF
17.12
SEIKO NPC CORPORATION —7
NPC [ NIPPON PRECISION CIRCUITS INC ]
