THYRISTOR MODULE
P D T 6 0 1 2 P D T 6 0 1 6
P D H 6 0 1 2 P D H 6 0 1 6
60A / 1200 to 1600V
FEATURES
OUTLINE DRAWING
* Isolated Base
* Dual Thyristors or Thyristor and Diode
Cascaded Circuit
* High Surge Capability
* UL Recognized, File No. E187184
PDT
PDH
φ
TYPICAL APPLICATIONS
* Rectified For General Use
Maximum Ratings
Approx Net Weight:155g
Grade
Symbol
Unit
Parameter
PDT/PDH6012
PDT/PDH6016
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
VDRM
VDSM
VRRM
VRSM
1200
1300
1200
1300
1600
1700
1600
1700
V
V
Max Rated
Parameter
Unit
Conditions
Value
50Hz Half Sine Wave condition
Tc=82°C
Average Rectified Output Current
RMS On-State Current
IO(AV)
IT(RMS)
ITSM
60
A
A
94
50 Hz Half Sine Wave,1Pulse
Non-Repetitive
Surge On-State Current
I Squared t
1200
7200
100
A
I2t
2msec to 10msec
VD=2/3VDRM, ITM=2 IO, Tj=125°C
A2s
A/µs
•
Critical Rate of Turned-On Current
di/dt
IG=200mA, diG/dt=0.2A/µs
Peak Gate Power
Average Gate Power
Peak Gate Current
PGM
PG(AV)
IGM
5
1
2
W
W
A
Peak Gate Voltage
VGM
VRGM
Tjw
Tstg
Viso
10
5
V
V
°C
°C
V
Peak Gate Reverse Voltage
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
-40 to +125
-40 to +125
2500
2.4 to 3.5
2.4 to 2.8
Base Plate to Terminals, AC1min
M6 Screw
Case mounting
Terminals
Mounting torque
Ftor
N•m
M5 Screw
Value per 1 Arm
NIEC [ NIHON INTER ELECTRONICS CORPORATION ]
