�½�
DIODE
FEATURES
Type :
20E1
OUTLINE DRAWING
* Miniature Size
* Low Forward Voltage drop
* Low Reverse Leakage Current
* High Surge Capability
* 52mm Inside Tape Spacing Package Available
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
V
RRM
V
RSM
I
O
I
F(RMS)
I
FSM
T
jw
T
stg
80
1.3
1.7
Approx Net Weight:0.38g
20E1
100
250
Ta=33°C *1
50Hz Half Sine
Wave Resistive Load
Ta=43°C *2
2.67
50Hz Half Sine Wave,1cycle,
Non-repetitive
- 40 to + 150
- 40 to + 150
Unit
V
V
A
A
A
°C
°C
Electrical
•
Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
I
RM
V
FM
Conditions
Tj= 25°C, V
RM
= V
RRM
Tj= 25°C, I
FM
= 1.7A
*1
*2
Min. Typ. Max.
-
-
-
-
-
-
10
0.92
105
70
Unit
µA
V
°C/W
Rth(j-a) Junction to Ambient
*1 : Without Fin or P.C. Board
*2 : P.C. Board Mounted (L=8mm, Print Land=15 x 15mm,Both Sides)
NIEC [ NIHON INTER ELECTRONICS CORPORATION ]
