�½�
DIODE
FEATURES
Type :
11ES2
OUTLINE DRAWING
* Miniature Size
* Low Forward Voltage drop
* Low Reverse Leakage Current
* High Surge Capability
* 26mm and 52mm Inside Tape Spacing Package
Available
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
V
RRM
V
RSM
I
O
I
F(RMS)
I
FSM
T
jw
T
stg
45
0.98
1.0
Approx Net Weight:0.17g
11ES2
200
400
Ta=25°C *1
50Hz Half Sine
Wave Resistive Load
Ta=50°C *2
1.57
50Hz Half Sine Wave,1cycle,
Non-repetitive
- 40 to + 150
- 40 to + 150
Unit
V
V
A
A
A
°C
°C
Electrical
•
Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
I
RM
V
FM
Conditions
Tj= 25°C, V
RM
= V
RRM
Tj= 25°C, I
FM
= 1.0A
*1
*2
Min. Typ. Max.
-
-
-
-
-
-
50
1.0
140
110
Unit
µA
V
°C/W
Rth(j-a) Junction to Ambient
*1:Without Fin or P.C. Board
*2:P.C. Board Mounted (L=3mm,Print Land=5x5mm,Both Sides)
NIEC [ NIHON INTER ELECTRONICS CORPORATION ]
